Measuring device and measuring method for film photo-thermal property
A measuring device and thin film technology, applied in the direction of color/spectral characteristic measurement, etc., can solve the problem of lack of detailed and systematic discussion, and achieve the effect of improving detection sensitivity
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Embodiment 1
[0086] Measurement Example 1: Measuring different thicknesses of HfO 2 The thermal conductivity of the film.
[0087] Such as Figure 6 shown, for 500nm HfO 2 Thin film, its phase signal has a local peak at the modulation frequency of 17.5kHz, calculated by the formula, the thermal conductivity of this film k=0.06Wm -1 K -1 , compared with the results measured by other methods in the literature 0.05Wm -1 K -1 relatively close. Other thicknesses of HfO 2 The measured and calculated results of the monolayer film are summarized in Table 1:
[0088] Table 1 HfO with different thicknesses 2 The thermal conductivity corresponding to the monolayer film
[0089]
Embodiment 2
[0090] Measurement Example 2: Measurement of SiO 2 Thin film TiO 2 The depth of the strongly absorbing layer.
[0091] According to the requirements of the experiment, we plated SiO with a strong absorbing layer inside 2 film. Of which SiO 2 The layer thickness is 1900nm, and the strong absorbing layer is oxygen-deprived TiO 2 , with a thickness of 200 nm. We measured the photothermal amplitude signal as Figure 7shown. As the modulation frequency increases, the photothermal signal decreases rapidly at first, but when it reaches a certain characteristic frequency, a local peak appears, and the peak frequency is 8.5kHz. By consulting other relevant literature, we will SiO 2 The thermal conductivity of the material is taken as 0.2Wm -1 K -1 , the final calculation shows that the depth of the strong absorption layer is 1950nm, which is very close to the actual value of 1900nm.
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