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Ion implantation dosage detection control method

A detection control and ion implantation technology, which is applied in semiconductor/solid-state device manufacturing, discharge tubes, electrical components, etc., and can solve problems such as inability to solve a variety of charged ion problems, infeasible implantation ion dose detection and control, etc.

Active Publication Date: 2013-12-25
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

However, the Faraday cup detection method still cannot solve the problem of various charged ions, so although this method has improved compared with the bias current method, it is still not feasible to directly use it for the detection and control of implanted ion dose in PIII

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Embodiment Construction

[0024] Because the existing PIII dose detection method has the disadvantages described in the previous part, this patent discloses a method for the detection and control of implanted ion dose in plasma immersion implantation. In order to make the purpose, technical scheme and advantages of the present invention more Clearly, the following will further describe in detail the embodiments of the present invention in conjunction with the accompanying drawings.

[0025] The ion implantation dose detection and control method of the present invention mainly utilizes the quasi-static Child-Langmuir (Child-Langmuir) sheath theory, in this theory, for a kind of ion:

[0026] Thickness of the plate sheath

[0027] the s 0 =(2ε 0 V 0 / en 0 ) 1 / 2 , (3)

[0028] where ε 0 is the hollow dielectric constant, V 0 is the pulse bias value, n 0 is the plasma ion density.

[0029] The time required for all ions in the slab sheath to be implanted

[0030] T 0 ≈2.7×2π / ω pi , (4)

[003...

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Abstract

The invention discloses an ion implantation dosage detection control method, belonging to the plasma immersion implantation dosage detection technology field. The method comprises the following steps: measuring a plasma characteristic parameter, particle ingredients in a plasma, and particle content of each ingredient; equating quality of all ions and radicals in the plasma as same quality; equating electrically charged amounts of all ions and radicals in the plasma as a same electrically charged amount; when a plasma object implantation dosage is determined, by utilizing the quasistatic Child-Langmuir sheath implantation model theory, calculating an implantation technology time of the object implantation dosage. According to the ion implantation dosage detection control method of the present invention, a plurality of charged ion detection problems existed in a present ion implantation dosage detection method can be overcome, and the method can be used for implantation process flow control of a plasma immersion implantation machine.

Description

technical field [0001] The invention relates to plasma immersion implantation technology, in particular to a method for detecting and controlling ion implantation dose which can be used in plasma immersion implantation. Background technique [0002] In the semiconductor process, the mainstream impurity doping technology adopts the beamline ion implantation technology (Ion Implantation, II). This method is to generate plasma by the ion source, and then extract the required ion components through mass spectrometry analysis. The ions are accelerated to a certain energy and injected into the semiconductor substrate (such as silicon wafer). This method requires complex mass spectrometry and scanning devices, low injection efficiency, complex structure, and extremely high cost. [0003] With the further shrinking of the feature size of integrated circuits, the ion implantation energy needs to be further reduced to below 1000 electron volts (sub-KeV). Negative effect. Therefore,...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/265H01J37/32
Inventor 汪明刚刘杰夏洋李超波陈瑶赵丽莉李勇滔
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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