Preparation method of polycrystalline mercuric iodide thick film with high orientation

A mercury iodide, high-orientation technology, applied in chemical instruments and methods, polycrystalline material growth, crystal growth and other directions, to achieve the effects of low cost, simple structure and easy operation

Inactive Publication Date: 2012-02-01
SHANGHAI UNIV
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  • Abstract
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Problems solved by technology

[0004] So far, no literature has recorded the growth of polycrystalline mercury iodide by chemical liquid phase vertical deposition method combined with vacuum evaporation physical vapor deposition method.

Method used

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  • Preparation method of polycrystalline mercuric iodide thick film with high orientation
  • Preparation method of polycrystalline mercuric iodide thick film with high orientation
  • Preparation method of polycrystalline mercuric iodide thick film with high orientation

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Embodiment

[0029] The technical process and steps in this experimental example are as follows:

[0030] 1. Preparation of mercuric iodide thin film as seed layer

[0031] a. Substrate substrate ITO preparation: Clean the surface of the ITO conductive glass, put it in acetone solution, absolute alcohol solution and deionized water solution for 15 minutes, and then dry the smooth ITO conductive glass.

[0032] b. Preparation of mercuric iodide thin film: 2,7-dibromo-4-hydroxymercuryl fluorescent red disodium salt (also known as mercury bromide red), iodine tincture reagent according to [Hg 2+ ] and [I ? ], each prepared into a solution with a concentration of 20g / L, and the volume ratio of the two solutions is 1:3; the mixed solution of the two is poured into the experimental device; the rotating magnet in the actual device is Rotate at a speed of 500 rpm per minute to fully react the two reagents; after 0.5h, the free metal Hg + with I - The ions are fully combined to form HgI 2Molec...

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Abstract

The invention relates to a preparation method which utilizes a vertical deposition technology excited by a magnetic agitation to grow a polycrystalline mercuric iodide thin film and takes the grown polycrystalline mercuric iodide thin film as a seed crystal layer to deposit and grow a polycrystalline mercuric iodide thick film with a high orientation on the seed crystal layer through a vacuum evaporation physical vapor deposition method. The grown polycrystalline mercuric iodide thick film with the high orientation is very suitable for preparing X-ray and Gama-ray polycrystalline mercuric iodide thick film detectors and the invention belongs to the technical field of preparation of a semiconductor thick film. In the preparation method, 2,7-dibromo-4-hydroxymercuri fluorescein red disodium salt (namely merbromin) and iodine tincture are taken as a precursor reaction solution and absolute alcohol is taken as a solvent to prepare the polycrystalline mercuric iodide thin film. In the method provided by the invention, the mercuric iodide thin film is taken as the seed crystal layer, the polycrystalline mercuric iodide thick film is deposited and grown through the vacuum evaporation physical vapor deposition method, and finally, the columnar-grain polycrystalline mercuric iodide thick film with the high orientation is obtained on a substrate.

Description

technical field [0001] The invention relates to a vertical deposition technique using magnetic stirring excitation to grow polycrystalline mercuric iodide film. The grown polycrystalline mercuric iodide film is used as a seed layer, and is deposited and grown on the seed layer by vacuum evaporation physical vapor deposition method. The preparation method of the oriented polycrystalline mercury iodide thick film. The grown high-orientation polycrystalline mercury iodide thick film is particularly suitable for the preparation of X-ray and Gama ray polycrystalline mercury iodide thick film detectors, and the invention belongs to the technical field of semiconductor thick film preparation. Background technique [0002] Mercury iodide (HgI 2 ) is a semiconducting compound, which is a material for making room temperature semiconductor nuclear radiation detectors, and has many excellent characteristics. Large band gap (2.13eV), high atomic number (M Hg =80, M I =53), high resis...

Claims

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Application Information

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IPC IPC(8): C30B28/12C30B29/12C23C14/06C23C14/24H01L49/02
Inventor 史伟民马磊杨伟光刘晟胡喆刘功龙陈亮亮
Owner SHANGHAI UNIV
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