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Plasma processing device and method

A plasma and processing device technology, which is applied in the fields of plasma, semiconductor/solid-state device manufacturing, discharge tubes, etc., can solve the problem that the etching selectivity ratio of Low-k film and SiC layer cannot be fully ensured

Active Publication Date: 2011-11-23
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, plasma etching using the fluorocarbon-based processing gas described in Patent Document 2 and Patent Document 3 cannot sufficiently ensure the etching selectivity ratio between the Low-k film and the SiC layer.

Method used

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Embodiment approach 1

[0214] First, the first embodiment will be described. figure 1 It is a schematic cross-sectional view showing the plasma etching apparatus of the first embodiment of the present invention.

[0215] The plasma etching apparatus is configured as a capacitive coupling type parallel plate plasma etching apparatus, and has a substantially cylindrical chamber (processing container) 10 made of, for example, aluminum whose surface is anodized. The chamber 10 is safely grounded.

[0216] At the bottom of the chamber 10, a cylindrical susceptor support 14 is arranged via an insulating plate 12 made of ceramic or the like, and a susceptor 16 made of, for example, aluminum is provided on the susceptor support 14. The susceptor 16 constitutes a lower electrode, and a semiconductor wafer W as a substrate to be processed is mounted thereon.

[0217] On the upper surface of the susceptor 16, an electrostatic chuck 18 for holding the semiconductor wafer W by electrostatic force is provided. The el...

Embodiment approach 2

[0363] Next, the second embodiment of the present invention will be described.

[0364] Figure 34 It is a schematic cross-sectional view showing a plasma etching apparatus according to a second embodiment of the present invention. in Figure 34 In, and figure 1 The same components are denoted by the same symbols, and the description is omitted.

[0365] In this embodiment, an upper electrode 34' having the following structure is provided instead of the upper electrode 34 of the first embodiment. The upper electrode 34' is composed of a ring-shaped outer upper electrode 34a arranged opposite to the base 16 at a predetermined interval, and a disc-shaped inner upper electrode 34b arranged on the radially inner side of the outer upper electrode 34a in an insulated state constitute. They are related to the generation of plasma, and have a relationship in which the outer upper electrode 34a is the main and the inner upper electrode 34b is the auxiliary.

[0366] As in Figure 35 As sh...

no. 3 approach

[0409] In the third embodiment, components common to the first and second embodiments are denoted by the same symbols.

[0410] Figure 40 It is a schematic cross-sectional view showing the plasma etching apparatus of the third embodiment of the present invention.

[0411] That is, it is applied from the first high-frequency power supply 88 to the susceptor 16 as the lower electrode, for example, 40 MHz high-frequency (RF) power for plasma generation, and from the second high-frequency power source 90 to the susceptor as the lower electrode 16 A lower RF dual-frequency application type plasma etching device that applies high-frequency (RF) power of, for example, 2 MHz for ion introduction, as shown in the figure, connects a variable DC power source 50 to an upper electrode 34 to apply it A plasma etching device with a specified direct current (DC) voltage. use Figure 41 The plasma etching apparatus will be described in detail.

[0412] This plasma etching apparatus is configured a...

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Abstract

The invention provides plasma processing device and a method The plasma processing device comprises an accommodating treated substrate and a processing container which can perform vacuum discharging; first electrodes relatively configured in the processing container and second electrodes for bearing the accommodating treated substrate; a first high frequency electric power enforcement unit of high frequency electric power for enforcing plasma to the electrodes; a second high frequency electric power enforcement unit of high frequency electric power for enforcing plasma to the electrodes; a direct current source for enforcing direct current to the first electrodes; and a processing gas supply unit for supplying gas to the processing container. The inner of the processing container is provided with conductive components with the purpose that the current from a DC source enforced by the first electrodes is released through the to the plasma.

Description

[0001] In this case, the filing date is June 21, 2005 , The application number is 200580020518.0 (PCT / JP2005 / 011333) , The title of the invention is Plasma processing device and method Divisional application of the patent application. Technical field [0002] The present invention relates to a plasma processing apparatus, a plasma processing method, and a computer-readable storage medium that perform plasma processing on a processed substrate such as a semiconductor substrate. Background technique [0003] For example, in the manufacturing process of a semiconductor device, in order to form a predetermined pattern on a predetermined layer formed on a semiconductor wafer as a substrate to be processed, plasma etching processing using a resist as a mask and etching with plasma is often used. [0004] As a plasma etching apparatus for performing such plasma etching, various apparatuses are used, and among them, a capacitive coupling type parallel plate plasma processing apparatus is t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05H1/46H01L21/311H01J37/32H01L21/3065
CPCH01L21/31116H01J2237/3342H01L21/31138H01J37/32706H01J37/32165H01J37/32532H01J37/32091H01L21/3205
Inventor 舆石公杉本胜日向邦彦小林典之舆水地盐大谷龙二吉备和雄齐藤昌司松本直树大矢欣伸岩田学矢野大介山泽阳平花冈秀敏速水利泰山崎广树佐藤学
Owner TOKYO ELECTRON LTD
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