Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Seeding mold for growing silicon crystals by using orientated solidification method and crystal growing method

A technology for growing silicon crystals and directional solidification, applied in crystal growth, self-solidification, single crystal growth, etc., to achieve the effects of avoiding spontaneous nucleation, low cost, and solving the problem of seed crystal placement

Inactive Publication Date: 2011-08-10
GREENERGY CRYSTAL TECH
View PDF3 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patented technology allows for efficient growing high purity monocrystals called SiC wafers by controllably cooling molten materials at specific temperatures without causing any unwanted changes such as defects that may occur when trying to form an epitaxial layer onto another material like sapphire.

Problems solved by technology

This patented technical problem addressed in this patents relates to improving the production rate or quality of monocular-silicone solar cell devices due to their high photovoltaics potential compared to other types of solar cells like polycrysene wafers.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Seeding mold for growing silicon crystals by using orientated solidification method and crystal growing method
  • Seeding mold for growing silicon crystals by using orientated solidification method and crystal growing method
  • Seeding mold for growing silicon crystals by using orientated solidification method and crystal growing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Such as image 3 and Figure 4 A kind of seeding mold 2 shown is processed by graphite material and placed in the bottom of prior art quartz crucible 1, including seed crystal container 3 and spacer liquid container 4, there is a square cylinder in the middle of seed crystal container 3 The first cavity is used to place the seed crystal 5, and the cross-sectional area of ​​the first cavity is 10000mm 2 , the height is 30mm, and the cross-sectional shape is a square; the spacer container 4 is formed by a cavity connected to the seed crystal container 3, and the cavity is surrounded by a graphite wall. Correspondingly, the bottom shape of the insulating liquid container 4 is adapted to the bottom shape of the quartz crucible 1 , so that the (liquid) insulating substance 8 placed in the insulating liquid container 4 can be separated from the bottom wall of the quartz crucible 1 . The upper part of the insulating liquid container 4 is open, and communicates with the inner...

Embodiment 2

[0045] Such as Figure 6 As shown, adopt the same method as that of Example 1, the difference is that in order to seed the crystal and better control the temperature gradient, the first cavity of the seed crystal container 3 has a section of diameter shrinkage near its top to form a long 10mm cavity. The necking section, the necking section itself is equal in diameter, but because the necking section has a gradually shrinking diameter, when the seed crystal grows through the narrow channel of the necking section, it can better eliminate the bit growth from the seed crystal. wrong.

[0046] In addition, a cavity is provided at the bottom of the seed crystal container 3, so that the temperature difference between the temperature at the position of the seed crystal 5 and the temperature around the quartz crucible 1 is larger, so that the temperature at the seed crystal 5 can be lowered when the silicon melt is kept overheated. Right around the melting point.

[0047] A further ...

example example 3

[0049] In the same manner as in Example 1, the difference is that the spacer 8 used is 6N high-purity germanium (Ge, with a purity of 99.9999%) and 5N high-purity lead (Pb, with a purity of 99.999%). The mass percentage is 1: 1 mixture.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a seeding mold for growing silicon crystals by using an orientated solidification method and a crystal growing method. The seeding mold is arranged at the internal bottom of a quartz crucible and comprises a seed crystal container and a sealing liquid container, wherein the sealing liquid container consists of cavities connected to the periphery of the seed crystal container and is used for accommodating a sealing substance; and the seed crystal container is provided with a first cavity for accommodating seed crystals. A method for growing monocrystalline silicon/similar monocrystalline silicon by adopting the seeding mold comprises the following steps of: arranging or setting the seeding mold at the bottom of the quartz crucible; arranging the sealing substance and the seed crystals in the sealing liquid container and the seed crystal container respectively; putting a silicon raw material into the quartz crucible; and growing monocrystals/similar monocrystals by adopting orientated solidification. By adopting the seeding mold and the crystal growing method, the problem of placement of the seed crystals can be solved without changing the structures of the conventional orientated solidification and quartz crucible, dislocation of the seed crystals in the seeding process is eliminated, and the spontaneous nucleation phenomenon of melt from the bottom wallface of the crucible is avoided. The seeding mold has low cost and is easy to process.

Description

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Owner GREENERGY CRYSTAL TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com