Reaction chamber with external heating mode for metal organic chemical vapor deposition system

Abstract

The invention relates to a reaction chamber with an external heating mode for a metal organic chemical vapor deposition system. The reaction chamber is of a double-layer structure, wherein the outer layer is a quartz protective chamber outer barrel, and the inner layer is quartz reaction chamber inner barrel; a substrate tray for placing a substrate is arranged in the reaction chamber inner barrel; the double protection ensures that the substrate is not influenced by the external environment in the reaction, and ensures the requirements on high purity and stable chemical and physical properties; the substrate tray of the reaction chamber provided by the invention is supported by a rotation shaft, and is connected with a rotating mechanism of the substrate tray through the rotation shaft; the substrate tray can automatically rotate in operation, thus effectively improving the uniformity of the components and the thickness of the thin membrane. According to the invention, a heating body is arranged outside the reaction chamber, so that the structure of the reaction chamber and the structure of the heating body are greatly simplified, and the equipment cost is lowered; meanwhile, the pollution of the heating component to the reaction chamber is avoided by the externally arranged heating body; a heater can move in the relative position relative to the substrate in the reaction chamber; and the substrate temperature can be simply and rapidly changed during the reaction process or when the movement is finished.

Description

technical field [0001] The invention belongs to the technical field of metal-organic chemical vapor deposition systems, and relates to a metal-organic chemical vapor deposition system (MOCVD) reaction chamber adopting an external heating method. Background technique [0002] Gallium nitride materials have been widely used in the preparation of blue lasers and light-emitting diodes (LEDs) for semiconductor lighting, among which metal-organic chemical vapor deposition systems (MOCVD) are essential key equipment. In addition, the MOCVD system is also the research and development of the world's advanced S, C, X, K and Q band GaN high-power electronic devices and high-voltage high-power solid-state switching devices, high-end laser devices and ultra-high-efficiency solar cells ( Efficiency can reach more than 40%) and other indispensable basic means of optoelectronic devices. For a long time, MOCVD equipment has relied on imports and is expensive, which not only consumes a lot o...

AI Technical Summary

Problems solved by technology

The currently commonly used MOCVD reaction chamber design has the following disadvantages: ①The heating body is located in the reaction chamber, which greatly shortens the service life of expensive heating components; at the same time, it also makes the heating components a potential source of pollution; in addition, the material requirements for the heating components Very high, need special materials, expensive

②The temperature of the substrate is controlled by adjusting the power of the heater. The temperature response of the substrate is slow. In the growth of a multilayer film with a steep interface, rapid temperature switching is usually required, which is not conducive to film formation.

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