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Gas supply equipment

A gas supply and equipment technology, applied in the field of plasma-assisted chemical vapor deposition systems, can solve the problems of local plasma generation, blocking RPS gas outlet, shortening the service life of remote plasma sources, etc., to improve deposition rate and improve cleaning efficiency. Effect

Active Publication Date: 2011-06-15
IND TECH RES INST
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  • Abstract
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  • Claims
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Problems solved by technology

However, the increase of the pipe diameter will increase the parasitic capacitance here, resulting in local plasma generation, and then film formation to block the RPS outlet
This situation is especially obvious in high-frequency PECVD systems, which leads to shortened service life of remote plasma sources

Method used

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Embodiment Construction

[0044] Please refer to the drawings below so that the technology of the present invention can be more fully understood. Although embodiments of the invention are shown herein in the drawings, the invention can be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In the drawings, for the sake of clarity, the sizes and relative sizes of the components and regions are not drawn in true scale.

[0045] Figure 1A and Figure 1B is a schematic diagram of the operation of a gas supply device according to the first embodiment of the present invention.

[0046] Please refer to Figure 1A , the gas supply device 100 of the first embodiment is used to guide gas to a process chamber 102 of a plasma-assisted chemical vapor deposition (PECVD) system. The gas supply equipment 100 of Fig. 1 comprises the inlet pipe 104 that enters the process chamber 102 from the outside of the process chamber 102, a clean gas pipe 106, a remote pl...

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Abstract

The invention relates to gas supply equipment for leading a gas to a process cavity of a plasma enhanced chemical vapor deposition system. The gas supply equipment at least comprises a gas inlet tube, a process gas tube, a clean gas tube, a remote plasma source and a regulating valve, wherein the gas inlet tube enters the process cavity from outside; the remote plasma source is connected with a clean gas source; the clean gas tube is connected with the gas inlet tube and the remote plasma source and used for inputting a clean gas into the gas inlet tube from the remote plasma source; the process gas tube is connected with the gas inlet tube and a process gas source and used for inputting a process gas into the gas inlet tube; and the regulating valve is arranged in the gas inlet tube and used for closing a passage positioned between the clean gas tube and the gas inlet tube to prevent the process gas from entering the clean gas tube when the process gas is led into the process cavity.

Description

technical field [0001] The present invention relates to a plasma-assisted chemical vapor deposition (PECVD) system, and in particular to a gas supply device for a high-frequency plasma-assisted chemical vapor deposition system. Background technique [0002] At present, the plasma-assisted chemical vapor deposition system has become the most important and main thin-film deposition process in the thin-film solar cell industry. For example, all film layers required for thin film solar cells can be produced by PECVD system. Usually, in the process chamber of the PECVD system, processes including depositing a thin film on a substrate and cleaning the process chamber are performed. Therefore, generally, at least process gas for depositing thin films and cleaning gas for cleaning are supplied to the process chamber. [0003] Recently, in response to large-area thin-film solar cells, a remote plasma source (Remote Plasma Source, RPS) is installed in the process chamber of a large-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455
Inventor 孙湘平陈友凡罗顺远洪凯祥吴兴华
Owner IND TECH RES INST
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