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Electro-optic modulator based on gamma 51 and realization method

An electro-optic modulator and electro-optic crystal technology, which is applied in the fields of instruments, optics, nonlinear optics, etc., can solve the problems of seldom used and inconvenient to use

Inactive Publication Date: 2011-04-27
JIANGHAN UNIVERSITY +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, because the half-wave voltage of this type of photoelectric effect generally requires tens of thousands of volts, it is inconvenient to use, and it is rarely used at present.

Method used

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  • Electro-optic modulator based on gamma 51 and realization method
  • Electro-optic modulator based on gamma 51 and realization method
  • Electro-optic modulator based on gamma 51 and realization method

Examples

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Embodiment 1

[0035] Embodiment one, according to figure 1 Cut KTa 0.35 Nb 0.65 o 3 Crystal, when l=1mm, d=1mm, l is the length of the crystal in the direction, d is the length of the crystal in the direction, near room temperature T=28°C, light wave wavelength λ=0.633μm, the half-wave voltage U π is 118V. Realize electro-optic modulation.

Embodiment 2

[0036] Embodiment two, according to figure 1 Cut BaTiO 3 Crystal, when l=1cm, d=1mm, l is the length of the crystal in the direction, d is the length of the crystal in the direction, at room temperature T=28°C, λ=0.546μm, the half-wave voltage U π =234V, realizing electro-optic modulation.

Embodiment 3

[0037] Example 3: Thin-film technology will be used to grow a-axis epitaxial growth of μm-level KTa on a platinum-coated Si substrate 0.35 Nb 0.65 o 3 Thin film, take l=1mm, d=2μm, the width of the sample is taken as 1mm, l is the length of the direction crystal, d is the length of the direction crystal; when T=28℃ near room temperature, λ=0.633μm, Half wave voltage U π It is 0.3V to realize electro-optic modulation.

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Abstract

The invention relates to an electro-optic modulator based on gamma 51 and realization and preparation method, wherein an electro-optic crystal is partitioned into three main axes, including x1 axis, x2 axis and x3 axis ,along the partitioning surface (010); two polaroids are respectively placed at two sides of the partitioning surface (010); an included angle of 45 DEG is respectively formed between the polarization direction of one polaroid and x1axis as well as between the polarization direction of the other polaroid and x3 axis; an electric field E is applied in x1 direction by a signal source; and x'1, x'2 and x'3 are index ellipsoid main axes after the electric field E is applied along the x1 direction. In the invention, the electro-optic modulator modulates light intensity according to the modulating signal intensity and linearly varies when a phase changing caused by regulating the included angle of the two polaroids to eliminate natural double refraction is under a small-signal condition. The electro-optic modulator in which the half-wave voltage is below 0.5 V can be realized by utilizing the scheme provided by the invention.

Description

technical field [0001] The invention relates to an electro-optical modulator and its implementation method, specifically using KTa 1-x Nb x o 3 or BaTiO 3 The huge electro-optic coefficient of isocrystalline materials γ 51 parameters to achieve electro-optic modulation, the linear electro-optic coefficient γ 51 The electro-optic effect caused by the parameter is equivalent to a secondary electro-optic effect. Background technique [0002] When the crystal is applied with an electric field, the refractive index of the crystal will change. If the change of the refractive index is proportional to the electric field strength, it is the Pockels effect (linear electro-optic effect). The linear electro-optic effect exists in 20 kinds of crystals without symmetry centers. There are two types of commonly used electro-optic crystals: KDP crystals belong to the tetragonal crystal system point group, lithium niobate (LiNbO 3 )-like crystals are the 3m point group of the trigonal...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/03
Inventor 周幼华邵亮
Owner JIANGHAN UNIVERSITY
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