Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Flash memory unit, flash memory device and programming method thereof

The technology of a flash memory unit and a programming method is applied in the field of a flash memory device and its programming, and a flash memory unit that can share a word line, and can solve the problems of reducing chip area, large chip area and unfavorable chip design, etc. accurate effect

Active Publication Date: 2015-06-24
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to overcome the problems in the above-mentioned prior art that each memory cell is connected to a word line will result in a larger chip area, which is unfavorable for chip design, the main purpose of the present invention is to provide a flash memory, which uses two memory cells The word line control gate is set between the floating gates, which can achieve the purpose of two memory cells sharing a word line through the word line control gate, which reduces the chip area and facilitates chip design.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flash memory unit, flash memory device and programming method thereof
  • Flash memory unit, flash memory device and programming method thereof
  • Flash memory unit, flash memory device and programming method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] The implementation of the present invention is described below through specific examples and in conjunction with the accompanying drawings, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific examples, and various modifications and changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0037] figure 1 It is a structural schematic diagram of a flash memory unit in a preferred embodiment of the present invention. Such as figure 1 As shown, a flash memory unit of the present invention includes: a semiconductor substrate 10, on which there are sequentially a first drain region 11, a first source region 21, a second source region 12, and a second drain region 22; The bit lin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a flash memory unit, a flash memory device and a programming method thereof. In the flash memory unit, a word line control grid is arranged between suspension grids of two storage units so that the two storage units can share one word line and the purpose of reducing the area of a chip is fulfilled. In the programming method, a bit line refresh circuit is connected with each bit line of a storage unit array, and the shielding voltage is refreshed during programming, so the shielding voltage is not reduced during programming, and the programming is more accurate and reliable.

Description

technical field [0001] The present invention relates to a flash memory unit, a flash memory device and a programming method thereof, in particular to a flash memory unit capable of sharing a word line, a flash memory device and a programming method thereof. Background technique [0002] In semiconductor memory devices, flash memory is a volatile memory, which belongs to Erasable Programmable Read-Only Memory (EPROM). The advantage of flash memory is that it can be erased for the entire memory block, and the erasing speed is fast, which takes about one to two seconds. Therefore, in recent years, flash memory has been used in various consumer electronic products, such as digital cameras, digital video cameras, mobile phones or notebook computers. [0003] Generally, a flash memory has two gates, a floating gate and a control gate, wherein the floating gate is used to store charges, and the control gate is used to control data input and output. The position of the floating ga...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/08G11C16/02
Inventor 杨光军
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com