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Light emitting diode and making method thereof

A technology of light-emitting diodes and die, applied in electrical components, circuits, semiconductor devices, etc., can solve the problem of reducing the light-emitting area, and achieve the effects of good thermal conductivity and improved light-emitting efficiency

Active Publication Date: 2011-02-02
JADE BIRD DISPLAY SHANGHAI LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The light-emitting diode structure in the prior art mostly uses the sapphire substrate 10. Since the material is an insulator, it is necessary to form a groove 16, and lead out the buffer layer 11 through the negative electrode 17. The groove 16 reduces the effective light-emitting area.

Method used

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  • Light emitting diode and making method thereof

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Embodiment Construction

[0042] In the light-emitting diodes of the prior art, the light-emitting diode die is generally formed on the sapphire substrate. Since the sapphire substrate is an insulating material, it is necessary to form grooves on the light-emitting diode die to form the connecting electrodes, resulting in a decrease in the effective light-emitting area. .

[0043] In the method for forming a light-emitting diode according to the technical solution, a semiconductor substrate and a sapphire substrate are respectively provided, a first bonding layer is formed on the semiconductor substrate, a sacrificial layer, a light-emitting diode die, and a second bonding layer are sequentially formed on the sapphire substrate. bonding layer, then bonding the first bonding layer and the second bonding layer, removing the sacrificial layer, peeling off the sapphire substrate, thereby transferring the light emitting diode die to the semiconductor substrate In addition, since the semiconductor substrate ...

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Abstract

The invention provides a light emitting diode and a making method thereof. The making method of the light emitting diode comprises the following steps of: separately providing a semiconductor substrate and a sapphire substrate, wherein a first bonding layer is formed on the semiconductor substrate, and a sacrifice layer, a light emitting diode core and a second bonding layer are formed on the sapphire substrate in sequence; bonding the first bonding layer and the second bonding layer; removing the sacrifice layer and stripping the sapphire substrate. The invention increases the effective light emitting area of the light emitting diode, improves the heat radiating and enhances the light emitting efficiency.

Description

technical field [0001] The invention relates to the field of semiconductor lighting, in particular to a light emitting diode and a forming method thereof. Background technique [0002] Semiconductor light-emitting diode (LED, Light Emitting Diode) is a semiconductor solid light-emitting device. It mainly uses solid semiconductor chips as light-emitting materials. Yellow, blue, green, blue, orange, purple and other colors of light. [0003] Light-emitting diodes are divided into monochromatic light-emitting diodes and white light-emitting diodes according to the color of light emitted. In the 1980s, ultra-high-brightness red light-emitting diodes appeared. The substrates of early red light-emitting diodes were opaque materials, and the luminous efficiency was 1-2lumens / watt (lumens / watt); In all ultra-high brightness red light-emitting diodes, the efficiency of the best model is about 9lumens / watt (lumen / watt), the spectral range is usually 650nm-640nm, and the driving curr...

Claims

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Application Information

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IPC IPC(8): H01L33/62H01L33/00
CPCH01L33/0079H01L33/641H01L33/007H01L21/2007H01L33/12H01L33/385H01L33/62H01L33/0093
Inventor 肖德元张汝京
Owner JADE BIRD DISPLAY SHANGHAI LTD
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