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Method for improving alignment precision after epitaxial growth

A technology of epitaxial growth and post-coating, which is applied in the field of improving the precision of post-coating of epitaxial growth, can solve the problem that the zero mark area cannot be measured, and achieve the effect of improving the precision

Inactive Publication Date: 2010-11-10
SHANGHAI HUA HONG NEC ELECTRONICS
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  • Abstract
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Problems solved by technology

[0006] The beneficial effect of the present invention is that it can avoid the problem that the zero mark area is flattened and cannot be measured after epitaxy, and greatly improves the accuracy of measuring overlay precision in epitaxy growth

Method used

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  • Method for improving alignment precision after epitaxial growth
  • Method for improving alignment precision after epitaxial growth
  • Method for improving alignment precision after epitaxial growth

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Embodiment Construction

[0013] The method of the present invention utilizes the characteristic that the epitaxial layer is difficult to grow on some materials. After the formation of the ordinary zero mark, the protective layer is filled and etched back, so that the zero mark is protected by the protective layer. In the subsequent epitaxial growth, Due to the different growth rates of different substrate materials, steps are formed to provide alignment for subsequent processes.

[0014] The principle of the method of the present invention lies in that it is difficult to grow on the protective layer or the growth rate is significantly different from that of the substrate layer (generally the substrate layer is silicon) during epitaxial growth. For the sake of process simplicity, the protective layer can be SiO 2 , SiN or SiON, or SiC, generally an inorganic compound between Si, C, 0, and N, and other materials with the same characteristics can also be used. It is only necessary to ensure that the hei...

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Abstract

The invention discloses a method for improving alignment precision after epitaxial growth, which comprises the following steps: forming a null layer on a substrate by photoetching, wherein the pattern section structure of the null layer is lower than the substrate; depositing to generate a protective layer on the substrate after the null layer is formed, wherein the protective layer is filled into the null layer; photoetching again by a dry process or a wet process to remove the protective layer on the surface of the substrate; and growing an epitaxial layer on the substrate. The invention can avoid the problem that the null area is flattened and can not be measured after epitaxy occurs, greatly improves the accuracy of measuring the alignment precision in epitaxial growth, and enables the production of epitaxial products with small sizes to be possible.

Description

technical field [0001] The invention relates to a process flow method of a product with an epitaxial growth process in semiconductor manufacturing. Background technique [0002] Pattern distortion is a relatively common phenomenon during the growth of epitaxial layers in semiconductor manufacturing. The pattern distortion will affect the alignment accuracy of subsequent lithography, thereby restricting the overlay accuracy of lithography, and limiting the development and manufacture of small-sized epitaxial devices. How to avoid or reduce the amount of pattern distortion generated during epitaxial growth is very important for improving the precision of photolithography overlay. [0003] At the same time, for devices grown by epitaxial growth, some buried layers are usually implanted before the formation of the field region. In order to ensure the alignment accuracy of the field region and these layers, a zero-layer photolithography is usually performed before all layers. S...

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Application Information

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IPC IPC(8): H01L21/20H01L21/306H01L21/311
Inventor 王雷
Owner SHANGHAI HUA HONG NEC ELECTRONICS
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