Low-temperature polysilicon thin film material
A technology of low-temperature polysilicon and thin-film materials, applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of induced metal residue, uncontrollable induced metal diffusion, long crystallization time, etc. Effect of reducing metal residue and shortening time
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example 6
[0060] According to an example of the present invention (taking Example 6 as an example), the method for preparing polysilicon thin film material comprises the following steps:
[0061] (1) select the glass substrate, adopt the PECVD method to deposit 1.0 micron low-temperature silicon oxide on the glass substrate as the barrier layer;
[0062] (2) Etching the barrier layer into a groove-shaped structure, wherein the protrusions have a rectangular cross-section, a width of 3 nanometers, a height of 3 nanometers (D=3.0nm), and a protrusion spacing of 60 microns;
[0063] (3) A layer of controllable nickel source is formed on the first isolation layer by sputtering as a metal induction layer, and the surface nickel concentration is 5×10 13 cm -2 ;
[0064] (4) Depositing a layer of barrier layer on the induction layer by PECVD method as the second barrier layer, the thickness of the second barrier layer corresponding to the protrusion of the first barrier layer is 1.5 nanomete...
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