Method for manufacturing lateral double-diffused metal oxide semiconductor transistor

Abstract

The invention relates to a lateral double-diffused metal oxide semiconductor transistor, namely an LDMOS transistor, and a structure, a manufacturing method and application. According to one embodiment of the invention, the method for manufacturing the LDMOS transistor with a source electrode region, a drain electrode region and a grid region on a substrate, includes: generating a P-typed bury layer region and a n-typed bury layer region, growing an external layer on the NBL / PBL region, forming a p-doped deep p-well region on the PBL region, forming a well region on the external layer, forming a doped body region, then forming a active region and a field oxidation region and forming a drain oxidation layer between the LDMOS transistor source region and the drain region, after the form of the doped body region, forming a grid oxidation layer approaching the source and drain region and forming a grid on the grid oxidation layer and one part of drain oxidation layer, then forming a dopeddrain region, and a first doped source region and a second doped source region.

Description

technical field [0001] The present invention relates to the field of semiconductor devices. More specifically, embodiments in accordance with the present invention relate to lateral double diffused metal oxide semiconductor transistors (LDMOS). Background technique [0002] Voltage regulators, such as DC-DC converters, are used to provide a stable voltage source for a wide variety of electronic systems. High efficiency DC-DC converters are especially required for battery management of low voltage devices such as laptops, mobile phones, etc. Switching voltage regulators generate a DC output voltage by converting an input DC voltage to a high frequency voltage, which is then filtered. Specifically, a switching regulator consists of a switch that alternately connects and disconnects a DC input voltage source (such as a battery) and a load (such as an integrated circuit IC), an output filter, and a controller. . The output filter typically includes an inductor and a capacito...

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Problems solved by technology

[0005] In view of the above-mentioned defects, the object of the present invention is to provide a lateral double-diffused metal-oxide-semiconductor transistor, as well as its manufacturing method and application, so as to solve the problems of complicated process and high cost in the prior art.

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