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Crystal clamp part for broaching silicon rod

A technology of silicon rod drawing and seed crystal, which is applied in the directions of single crystal growth, crystal growth, and self-melt pulling method, etc., can solve problems such as unreasonable structural design, and achieve the elimination of fracture factors, long guiding length, and synchronous rotation Effect

Inactive Publication Date: 2010-07-21
EGING PHOTOVOLTAIC TECHNOLOGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to overcome the above-mentioned deficiencies caused by the unreasonable structural design of the existing silicon rod pulling parts, the present invention provides a silicon rod pulling part.

Method used

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  • Crystal clamp part for broaching silicon rod
  • Crystal clamp part for broaching silicon rod
  • Crystal clamp part for broaching silicon rod

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Embodiment Construction

[0015] The specific embodiment of the present invention will be described in detail below by taking the clamping part of the tetragonal subcrystal as an example.

[0016] as attached Figure 1 ~ Figure 3 As shown, the silicon rod drawing of the present invention is made up of a subcrystal clamp part for silicon rod drawing, which is composed of a subcrystal 1 and a chuck 2. The subcrystal 1 includes a connecting quadrangular truss and a lifting rod 12 whose cross-sectional shape is a square, and the connecting quadrangular The upper table surface 13 of the table is larger than the lower table surface 14, and the lifting rod 12 is arranged on the lower end surface of the lower table surface 14. The chuck 2 includes a threaded hole 21, a polygonal platform hole 22 and a guide hole 23, and the threaded hole 21, the polygonal platform hole 22 It is a coaxial hole system with the guide hole 23, the cross-sectional shape of the polygonal truss hole 22 is a quadrangular truss, and th...

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Abstract

The invention relates to a crystal clamp part for broaching a silicon rod, which is provided with a polygon terrace hole. A crystal is provided with a connecting polygon terrace and a lifting rod, wherein the upper terrace face of the connecting polygon terrace is greater than the lower terrace face; the lifting rod is arranged on the lower end face of the lower terrace face; the clamp is provided with a polygon terrace hole; a connecting polygon terrace for the crystal is sheathed in the polygon terrace hole; torque transmission and axial tension between the crystal and the clamp can be realized through the matched connecting structure of a shaft and the hole of the polygon terrace without grinding nicks on crystal or using a fixing pin for connection. The section area of the lifting rod on the crystal cannot be reduced so that the breaking factor of the crystal in the broaching process is eliminated in structure. The invention not only can solve the breaking problem of the crystal, but also can realize synchronous rotation of the crystal and the crystal clamp.

Description

Technical field: [0001] The invention relates to a silicon rod drawing furnace for monocrystalline silicon or polycrystalline silicon, in particular to a sub-crystal chuck part in the silicon rod drawing furnace. Background technique: [0002] Monocrystalline silicon and polycrystalline silicon have been widely used in the semiconductor and solar cell industries, and the Czochralski method for preparing silicon rods is the most commonly used method in the field of silicon rod manufacturing. In the crystal pulling furnace, after the silicon material is melted at high temperature, the silicon ingot is rotated out through the sub-crystal chuck part. The lower end is bonded to the upper end of the high-temperature molten ingot. At present, the commonly used seed crystal is cylindrical single crystal silicon. In order to connect the cylindrical seed crystal to the chuck, a After the seed crystal is put into the fixing hole of the chuck, the seed crystal is fixed on the chuck by ...

Claims

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Application Information

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IPC IPC(8): C30B15/32
Inventor 蒋新民
Owner EGING PHOTOVOLTAIC TECHNOLOGY CO LTD
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