The establishment and simulation method of mosfet mismatch model

Abstract

The invention discloses a method for establishing and simulating a MOSFET mismatch model, which adopts the BSIM3 model as the basis, and is divided into the following steps: the first step is to use the statistical principle to establish the statistical expression of the model parameter random error; the second step is to use the model parameter For the physical definition of random error statistical expressions, select targeted model parameters in the BSIM3 model and add statistical expression correction items to them; the third step is to establish the corresponding SPICE macro model; the fourth step is to define the correction coefficient The initial value of ; the fifth step, the initial value of the correction coefficient is substituted into the model, and the parameters of the model are debugged and simulated. By adjusting the coefficients of the mismatch error function correction formula in the model, the invention can make the model accurately describe the trend of the actual process mismatch error. By debugging the parameters, the actual process monitoring trend line can be very close to the model simulation trend line. This modeling method can conveniently and better simulate the mismatch statistical error of the actual process.

Description

technical field [0001] The invention relates to a modeling method of a semiconductor device, in particular to a method for establishing and simulating a MOSFET mismatch model. Background technique [0002] In the process of circuit design, the existence of device process mismatch error will cause a certain deviation in the design. In general, factors such as differences in gate oxide thickness, device size, and spacing between devices will have an impact on the process mismatch error. [0003] Therefore, with the improvement of circuit design requirements, the requirement for model accuracy is not only reflected in the electrical characteristics, but also needs to be able to reflect the characteristic error caused by the mismatch of the process. However, the existing device models usually do not specifically describe the actual error situation except for describing the upper and lower limits of the process level. Therefore, it is necessary to establish the description func...

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Problems solved by technology

However, the existing device models usually do not specifically describe the actual error situation except for describing the upper and lower limits of the process level.

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