Method for extracting length offset value of resistance model

Abstract

The invention provides a method for extracting the length offset value of a resistance model in modeling, comprising the steps of: putting a plurality of resistance devices under test in the same temperature; sequentially and respectively applying a plurality of electric fields with different intensities to the resistance devices under test, wherein the resistance devices under test are manufactured by the same technology, and have the same ideal width and different ideal lengths; measuring the electric current which passes through the different resistance devices under test, and counting theresistance value of the different resistance devices under test; and respectively fitting the relation curve of the ideal length and the resistance value of the resistance model under the electric field with the same intensity, wherein the horizontal ordinate of a curve intersection point of the electric field with different intensities is the length offset value of the resistance model. The invention provides a novel method for extracting the length offset value of the resistance model in modeling by fitting the curve, wherein the extraction mode is simple and feasible, and the extracted length offset value is added into parameter setting in the process of simulating, so that a simulated result is more exact and reliable.

Description

technical field [0001] The invention relates to a method for extracting parameters of a resistance model, and more particularly to a method for extracting a size deviation value of a resistance model. Background technique [0002] In the current semiconductor industry, the use of modeling and simulation technology to study the performance of semiconductor devices and circuits has been paid more and more attention by people in the industry. In modeling and simulation technology, a resistance model is generally established in a corresponding software program, and relevant parameters of the resistance model are input, and these parameters are used for subsequent simulation of the performance of the resistance in various environmental parameters. [0003] figure 1 Shown is a schematic diagram of the structure of the resistance model that needs to be simulated. [0004] Ideal resistance ( figure 1 shown by the dotted line) has an ideal length L draw , ideal width W draw , th...

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Problems solved by technology

[0008] As the simulation technology becomes more and more accurate, slight errors will cause the simulation results to deviate from the actual situation. Therefore, it is more and more important to consider the length deviation value in the simulation process for the accuracy of the simulation results. However, due to the length deviation value of the resistance model and its Tiny, simple measurement methods cannot be measured accurately, and how to extract the length deviation value of the resistance model is also more and more valued by the industry

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