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GaN-based multi-quantum well super light-emitting diode (SLED) and preparation method thereof

A technology of superluminescence and multiple quantum wells, which is applied in the field of third-generation semiconductor material GaN-based multiquantum well superluminescence light-emitting diodes and its preparation, can solve the problems of low output power, achieve high output power, simple preparation, and reduce The effect of operating voltage

Inactive Publication Date: 2011-01-05
JIANGXI EPITOP OPTOELECTRONICS
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Problems solved by technology

The purpose of the present invention is to provide a GaN-based multi-quantum well superluminescent light-emitting diode with high light extraction efficiency and output power and its preparation method for the existing GaN-based LEDs with low output power.

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  • GaN-based multi-quantum well super light-emitting diode (SLED) and preparation method thereof
  • GaN-based multi-quantum well super light-emitting diode (SLED) and preparation method thereof
  • GaN-based multi-quantum well super light-emitting diode (SLED) and preparation method thereof

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Abstract

The invention provides a GaN-based multi-quantum well super light-emitting diode (SLED) with higher extraction efficiency and output power and a preparation method thereof, relating to a light-emitting diode (LED). The SLED is provided with a sapphire substrate on which a multi-layer heterostructure epitaxially grows; the multi-layer heterostructure is provided with a low-temperature GaN buffer layer, an N-type GaN electrode contact layer, an N-type AlGaN / GaN superlattice light limiting layer, an N-type GaN wave guide layer, an InGaN / GaN multi-quantum well active layer, a p-type AlGaN electronblocking layer, a p-type GaN wave guide layer, a P-type AlGaN / GaN superlattice light limiting layer, a p-type GaN layer and a p-type InGaN / AlGaN superlattice electrode contact layer; an n-type electrode is arranged on the N-type GaN electrode contact layer and a p-type electrode is arranged on the p-type InGaN / AlGaN superlattice electrode contact layer.

Description

A GaN-based multi-quantum well superluminescent light-emitting diode and its preparation method technical field The invention relates to a light-emitting diode, in particular to a third-generation semiconductor material GaN-based multi-quantum well superluminescent light-emitting diode (SupperLight-EmittingDiodes) and a preparation method thereof. Background technique Superradiation light is obtained by spontaneously emitting photons propagating in the gain medium and undergoing a process of stimulated amplification, and the amplified spontaneous emission is called superradiation. Semiconductor superluminescent light-emitting diodes have all the characteristics of lasers (LD) and light-emitting diodes (LEDs): for traditional LEDs, their light-emitting mechanism is to emit isotropic light through the spontaneous emission of the active layer, so in the traditional rectangular There is a serious total reflection problem in the cavity structure. In theory, only 2% of the light...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
Inventor 刘宝林朱丽虹
Owner JIANGXI EPITOP OPTOELECTRONICS
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