SiC material comprising combination of alpha-SiC and beta-SiC and two-part plasma chamber cathode manufactured using the same

Abstract

The present invention provides an alpha type SiC-beta SiC combination type reaction sintered SiC material, a preparing method and a two-body plasma cathode using the material, especially to an alpha type SiC-beta SiC combination type reaction sintered beta type SiC material used for semiconductor engineering components and a preparing method thereof, wherein the method comprises the following steps: obtaining the alpha type SiC powder through normal-pressure or pressure sintering, mixing the carbon powder with the alpha type SiC powder for obtaining carbon-alpha type SiC mixture, and after heating the carbon-alpha type SiC mixture for forming, reacting with the fused silicon in a vacuum high-temperature environment for obtaining the beta-type SiC material with the electric resistance which satisfies the electric characteristic. The invention also provides the two-body plasma cathode which has a silicon-SiC structure and a flat or a certain-degree profile funnel shape and has a drop height.

Description

technical field [0001] Recently, SiC material is used more and more widely as a component in semiconductor engineering. Among them, the present invention relates to a preparation method of SiC material with electrical properties, especially mixing carbon powder and α-type SiC powder Together to obtain a carbon-α-type SiC formed body, the molten silicon whose resistance has been adjusted is reacted with the carbon-α-type SiC formed body, and infiltrated into the formed body, so that the α-type SiC-β-type SiC combination type reaction The sintered SiC material has the characteristics of excellent mechanical properties, high purity, and high strength. At the same time, it also has the electrical properties necessary for semiconductor engineering, low manufacturing costs, and can speed up the sintering process. α-type SiC-β-type SiC silicon-bonded type Reaction sintered SiC material, its manufacturing method and plasma chamber cathode with flat or angled outer funnel shape and dro...

AI Technical Summary

Problems solved by technology

However, when manufacturing the CVD-silicon carbide, a lot of expensive sintering aids are required, which not only increases the manufacturing cost of the cathode, but also increases the content of impurities in the silicon carbide sintered body with the addition of a large amount of sintering aids. , making it difficult to apply to wafer engineering

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