Standard CMOS fully differential optical detector and manufacturing method thereof
A photodetector and fully differential technology, which is applied in semiconductor/solid-state device manufacturing, radiation control devices, electrical components, etc., can solve problems such as asymmetry of input signals, limitation of optical receiver bandwidth and sensitivity, and imbalance of differential branches. , to achieve the effect of improving bandwidth and sensitivity
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[0025] The present invention is achieved by the following methods: figure 1 It is a top view of the structure of the standard CMOS fully differential photodetector of the present invention; figure 2 It is a structural sectional view of the standard CMOS fully differential photodetector of the present invention along the longitudinal bisector; image 3 is the equivalent circuit model of the standard CMOS fully differential photodetector of the present invention when it works normally. The present invention is described in detail below in conjunction with accompanying drawing and embodiment:
[0026] figure 1 with figure 2 The manufacturing process flow of the standard CMOS fully differential photodetector shown is as follows:
[0027] First, a rectangular deep N well region 2 and a concave deep N well region 3 as well as a rectangular high voltage P well region 4 and a concave high voltage P well region 5 are sequentially fabricated on a P-type substrate 1 . Among them, ...
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