Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Continuous plasma reinforced chemical vapor deposition reaction chamber for preparing amorphous silicon film

A technology of amorphous silicon thin film and plasma, applied in the direction of gaseous chemical plating, coating, metal material coating process, etc., can solve the problems of expensive, bulky, complex structure, etc., and achieve the effect of simple structure

Inactive Publication Date: 2009-07-15
48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In foreign countries, this equipment has been developed, but the structure of the equipment is complex, expensive and bulky
Some domestic research institutions and colleges and universities are difficult to accept

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Continuous plasma reinforced chemical vapor deposition reaction chamber for preparing amorphous silicon film
  • Continuous plasma reinforced chemical vapor deposition reaction chamber for preparing amorphous silicon film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] Such as figure 1 As shown, the continuous plasma-enhanced chemical vapor deposition reaction chamber for preparing an amorphous silicon thin film includes a large cylindrical reaction chamber 1 composed of a bottom plate 7 and a reaction cover 26 mounted on the bottom plate 7, and its structural characteristics Yes, the large reaction chamber 1 is provided with a piece-in chamber 2 and three circular small reaction chambers with the same structure, namely the first small reaction chamber 3, the second small reaction chamber 4, and the third small reaction chamber 5. The axis lines of the three small circular reaction chambers are all parallel to the axis line of the large reaction chamber 1, and on the same horizontal section, the center of the three small circular reaction chambers and the insertion chamber is from the center of the large reaction chamber. The distances are all equal, and the centers of the three small circular reaction chambers and the entry chamber are ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
Login to View More

Abstract

A continuous mode plasma enhanced chemical vapor deposition reaction chamber for preparing an amorphous silicon membrane comprises a support plate and a big cylindrical reaction chamber arranged on the support plate and formed by a reaction cover. The big reaction chamber is provided with a film entering chamber and three small round reaction rooms with the same structures. The axial leads of the three small round reaction rooms are parallel to the axial lead of the big reaction room. The distances between the centers of the circles of the three small round reaction chambers on the same horizontal cross-section and the film entering chamber and the center of the circle of the big reaction room are all equal. The centers of the circles of the three small round reaction chambers and the center of the circle of the film entering chamber are distributed on the same circumference. The reaction chamber can meet the deposition of P, I, N layers of hull cells, has simpler structure, is suitable for being used in the development of the hull cells and can meet the production of cell slices with the small size.

Description

Technical field [0001] The invention designs and prepares the amorphous silicon thin film equipment, and further refers to the plasma enhanced chemical vapor deposition equipment reaction chamber device used for depositing the P, I, and N layers of the thin film battery. Background technique [0002] The photovoltaic industry has developed rapidly in recent years. As the first generation product of the photovoltaic industry, crystalline silicon solar technology has been developed by leaps and bounds. The technology is mature, the entire domestic industrial chain is basically integrated, and all equipment has been localized. The second-generation product of the photovoltaic industry-thin-film solar energy has been developed in China. Continuous PECVD is the most critical equipment on the thin-film solar cell production line. The equipment is mainly used to deposit the P, I, and N layers of thin film batteries, which are composed of separate reaction chambers. Each reaction chamber...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44C23C16/24
Inventor 周大良刘良玉
Owner 48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products