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Semiconductor device with test structure and semiconductor device test method

A technology for testing structures and semiconductors, applied in the directions of instruments, measuring electricity, measuring devices, etc., can solve the problems of inability to detect transistors, etc., and achieve the effect of easy structural change and easy determination

Inactive Publication Date: 2009-07-01
NXP BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, this solution only detects and compensates for mismatches between different transistor groups and cannot detect local V th lost pair
This is a disadvantage because such mismatches can be severe, for example, as high as 80mV for V th lost pair

Method used

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  • Semiconductor device with test structure and semiconductor device test method
  • Semiconductor device with test structure and semiconductor device test method
  • Semiconductor device with test structure and semiconductor device test method

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Embodiment Construction

[0026] It should be understood that the drawings are only schematic and not drawn to scale. It should also be understood that the same reference numerals are used throughout the drawings to designate the same or similar parts.

[0027] exist figure 1 1 , a semiconductor device (which may be an IC or a wafer carrying multiple ICs) has a test structure 100 including a ring oscillator 130 coupled between a first supply rail 110 and a second supply rail 120 . The ring oscillator 130 has an output 132 at which the output frequency of the ring oscillator 130 is provided. Output 130 may be coupled to an output pin (not shown) of a semiconductor device. The conductive coupling between the first power rail 110 and the ring oscillator 130 includes an array 140 of transistors 142 . Transistor 142 may be implemented using any suitable technology, such as without limitation CMOS technology. Furthermore, transistors 142 do not have to be the same size. This will depend on the specific ...

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Abstract

The invention relates to a semiconductor device comprising a test structure (100) for detecting variations in the structure of the semiconductor device, the test structure (100) comprising a first supply rail (110), a second supply rail (120), a ring oscillator (130) coupled between the first supply rail (110) and second supply rail (120), the ring oscillator (130) having an output (132) for providing a test result signal, and an array (140) of individually controllable transistors (142) coupled in parallel between the first supply rail (110) and the ring oscillator (130). Variations in the current output of the respective transistors (142) in the array (140) lead to variations in the respective output frequencies of the ring oscillator (130). This gives a qualitative indication of the aforementioned structural variations. More accurate results can be obtained by inclusion of a reference current source (160) for calibrating the ring oscillator (130) prior to the measurement of the current output of the individual transistors (142).

Description

technical field [0001] The present invention relates to a semiconductor device comprising a test structure for detecting changes in the structure of the semiconductor device, the test structure comprising a first power supply rail, a second power supply rail, and a power supply coupled between the first power supply rail and the second power supply rail. A ring oscillator between two supply rails, the ring oscillator has an output for providing a test result signal. [0002] The invention also relates to a method for testing such a semiconductor device. Background technique [0003] Miniaturization of semiconductor devices, such as integrated circuits (ICs), facilitates the integration of a large number of components, such as transistors, on the device. However, this comes at the cost of, for example, increased sensitivity of the device to (manufacturing) process variations, which can lead to failure of the semiconductor device. Even if the device does not fail after manuf...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/30
CPCG01R31/2884G01R31/3161
Inventor 马塞尔·佩尔戈姆比奥莱塔·彼得雷斯库普鲁维·斯恩达克拉
Owner NXP BV
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