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Transistor resistance and correlation method

A transistor resistance, transistor technology, applied in the direction of resistors, circuits, diodes, etc., can solve problems such as poor linearity and resistance value changes

Inactive Publication Date: 2009-04-22
REALTEK SEMICON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this way, although a very large resistance value per unit area can be obtained, its great disadvantage is that the resistance value will change with the input signal, that is, the linearity is very poor.

Method used

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  • Transistor resistance and correlation method
  • Transistor resistance and correlation method

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Embodiment Construction

[0022] This description takes a MOS transistor as an example, but it is not limited thereto. Figure 1A is a schematic diagram of an embodiment of the transistor resistor of the present invention. In the figure, the transistor resistor 10 includes an NMOS transistor 11 , a compensation circuit 12 and a bias circuit 13 . The NMOS transistor 11 operates in the resistive region, that is, its gate-to-source voltage v GS Need to be greater than the threshold voltage (threshold vol tage) V T , and the drain-to-source voltage v DS need to be small. When the NMOS transistor 11 operates in the resistance region, there will be a current i D flows into its drain and out of its source, and i D with v DS The relationship between

[0023] i D =2K(v GS -V T )v DS Formula 1)

[0024] in, K = 1 2 μ n C ox W L ...

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Abstract

The invention relates to a transistor resistance and a correlation method thereof. A transistor is operated in a resistance area, and the drain electrode of the transistor receives an input signal and the source electrode of the transistor outputs an output signal, and then a compensating circuit is used for generating a compensating signal which is sent into the grid electrode of the transistor according to the input signal, thus leading the voltage difference between the grid electrode and the source electrode of the transistor to approach a constant, so as to improve the resistance linearity of the transistor resistance.

Description

technical field [0001] The invention relates to a resistance device, and relates to a transistor resistance device and a method thereof. Background technique [0002] In an integrated circuit (integrated circuit, IC), resistors are often required, and existing semiconductor processes provide various ways to implement resistors. For example, in a standard complementary metal oxide semiconductor (CMOS) process, the following resistors are provided: silicided polysilicon, silicided p+ or n+ active region, n-well (n well) and metal layer (metal layer), etc. Among them, the resistance value per unit area of ​​the n-type well is the highest, which is about 1k ohm / square. However, in some circuits, it is necessary to use a very large resistance value, such as a first-order filter with a 3dB bandwidth of 100kHz, if its capacitance value is 10pF, the required resistance value is about 160k ohm, even if it is used The resistance of the n-type well still occupies a very large area of...

Claims

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Application Information

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IPC IPC(8): H03H11/46H01L27/00H01L29/8605H01C13/00
Inventor 林尹尧
Owner REALTEK SEMICON CORP
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