Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Thin-film transistor, manufacturing method thereof and liquid crystal display panel

A technology for liquid crystal display panels and thin film transistors, which is applied in the manufacture of transistors, semiconductor/solid-state devices, semiconductor devices, etc., can solve the problems of reducing the on/off current ratio, increasing the leakage current value, affecting the display quality of the liquid crystal display panel, etc. The effect of maintaining process quality

Inactive Publication Date: 2009-03-18
INNOLUX CORP
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A wider channel area leads to problems such as increased leakage current value of thin film transistors and lower on / off current ratio. In addition, it also reduces the switching response time and increases the noise of the display screen, which affects the display quality of the LCD panel as a whole.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin-film transistor, manufacturing method thereof and liquid crystal display panel
  • Thin-film transistor, manufacturing method thereof and liquid crystal display panel
  • Thin-film transistor, manufacturing method thereof and liquid crystal display panel

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0051] Please refer to figure 2, which is a partial schematic diagram of a liquid crystal display panel according to a preferred embodiment of the present invention. The liquid crystal display panel 200 includes a substrate 110 , a plurality of scan lines 130 , a plurality of data lines 150 and a plurality of thin film transistors 100 arranged in an array. The scan lines 130 and the data lines 150 are disposed on the substrate 110 , and the data lines 150 are substantially perpendicular to the scan lines 130 . Please also refer to image 3 , which shows figure 2 A cross-sectional view of a thin film transistor. Each TFT 100 includes a gate 17 , a gate insulating layer 19 , a semiconductor layer 20 and a source / drain metallization layer 30 . The gate 17 is disposed on the substrate 110 and is electrically connected to a scan line 130 (such as figure 2 as shown). The gate insulation layer 19 is disposed on the substrate 110 and covers the gate 17 . The semiconductor la...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a thin film transistor, a production method and a liquid crystal display panel thereof, wherein the thin film transistor comprises a grid electrode, a grid insulating layer, a semiconductor layer, a source electrode and a drain metalizing layer, wherein the grid electrode and the grid insulating layer are arranged on a base plate, and the grid insulating layer covers the grid electrode, the semiconductor layer is arranged on the grid insulating layer, the source electrode and the drain metalizing layer are located on two sides of the semiconductor layer, a first conductor layer, a second conductor layer and a third conductor layer are provided, and each conductor layer is arranged on the semiconductor layer in turn. The lower surface of the first conductor layer is completely contacted with the upper surface of the semiconductor layer without exposure, the upper surface of the first conductor layer is partially exposed on the second conductor layer, and the lower surface of the third conductor layer is completely contacted with the upper surface of the second conductor layer without exposure. The invention can effectively control the channel width of the thin film transistor in a process, further keeps the process quality of the thin film transistor, and has the advantages of no needing to buy extra process devices, and being compatible with a tradition process.

Description

technical field [0001] The present invention relates to a thin film transistor, its manufacturing method, and a liquid crystal display panel using the same, and in particular to a thin film transistor with a source and drain metallization layer of a multilayer structure, its manufacturing method, and its application its liquid crystal display panel. Background technique [0002] With the rapid progress of liquid crystal display panel (Liquid Crystal Display panel, LCD panel) production technology, and its advantages of light weight, small size, low power consumption and low amplitude radiation, the liquid crystal display panel is widely used in personal In various electronic products such as personal digital assistants (Personal Digital Assistant, PDA), notebook computers, digital cameras, mobile phones, computer screens and flat-screen TVs. Coupled with the industry's active investment in research and development and the adoption of large-scale production equipment, the qu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L29/43H01L29/423H01L21/336H01L21/28G02F1/1362
Inventor 许博文蔡桂泽
Owner INNOLUX CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products