Radio frequency micro electromechanical system switch of electrostatic push-draw type monocrystaline silicon beam

Abstract

The invention relates to the technical field of radio frequency electromechanical system, and discloses an electrostatic push-pull type mono-crystal silicon beam radio frequency micro-electromechanical system switch comprising a switch movable portion and a switch immovable portion; the switch movable portion is formed by a top layer mono-crystal silicon of SOI, upper sides of two ends of the switch movable portion is respectively provided with a lower electrode and a contact; the switch immovable portion is fixedly connected with the top layer mono-crystal silicon of SOI, lower sides of two ends of the switch immovable portion and the position corresponding to the lower electrode of the switch movable portion are provided with upper electrodes, lower sides of two ends of the switch immovable portion and the position corresponding to the contact of the switch movable portion are provided with transmission wires; the upper electrodes and the lower electrodes form a push-pull type structure by respectively applying voltage to the upper electrodes and the lower electrodes of two ends in order to contact or disconnect the transmission wires and the contacts, thus realizing the switch movement. Usage of the invention can reduce the drive voltage, prolong the service life of the switch and make RF MEMS become products more likely.

Description

technical field [0001] The invention relates to the technical field of radio frequency (RF) MEMS in microelectromechanical system (MEMS) application in microelectronic technology, in particular to an electrostatic push-pull single crystal silicon beam radio frequency microelectromechanical system switch. Background technique [0002] Radio frequency micro-electromechanical system (RF MEMS) switches are widely used in switch networks, low-noise and low-power circuits, portable wireless systems, and phased array radars. Compared with traditional solid switches composed of FETs or PIN diodes, electrostatically driven RF MEMS switches have the characteristics of high cut-off frequency, low insertion loss, high isolation and good linearity. [0003] The RF MEMS switch is composed of a mechanical part and an electrical part, and can provide driving force for mechanical movement by electrostatic, magnetostatic, piezoelectric or thermal principles. The electrical part of the switch...

AI Technical Summary

Problems solved by technology

[0006] The research on electrostatically driven RF MEMS switches has always been a hot spot in the business community, because electrostatic driving has zero DC power consumption, short switching time, simple structure, easy processing and easy compatibility with IC technology, which makes its commercialization possible, but restricts its development. The main problems are high driving voltage, thin film stress deformation and short life, which cannot meet the requirements of the industry.

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