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Semiconductor voltage regulation device

A technology of voltage regulator devices and semiconductors, applied in semiconductor devices, electric solid state devices, electrical components, etc., can solve the problems of large leakage, unfavorable application in high frequency fields, shortening of depletion layer, etc., and achieve the effect of improving characteristics

Inactive Publication Date: 2008-07-23
上海维恩佳得数码科技有限公司
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  • Abstract
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AI Technical Summary

Problems solved by technology

This voltage regulator device relies on Zener breakdown formed by the current crossing the potential barrier in the range below 7V. This low-voltage regulator device has a large leakage, which is the so-called "soft breakdown" characteristic.
At the same time, the high doping required for the formation of Zener breakdown also causes the shortening of the depletion layer, which in turn causes the high junction capacitance of this low-voltage regulator device, which is not conducive to the application in the high-frequency field.

Method used

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  • Semiconductor voltage regulation device
  • Semiconductor voltage regulation device

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Embodiment Construction

[0029] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0030] figure 1 A cross-section of a preferred embodiment of the semiconductor voltage regulator transistor of the present invention is shown, and this embodiment uses an N-P-N three-layer structure to illustrate the technical solution of the present invention.

[0031] See figure 1 A high-resistance N-type epitaxial semiconductor layer 2 is grown on a low-resistance N-type semiconductor substrate 1, wherein the resistivity of the substrate 1 is lower than 0.1 ohm·cm, and the thickness of the epitaxial semiconductor layer 2 is Between 1-20 microns, resistivity between 0.05-10 ohm·cm, and the resistance value of the epitaxial semiconductor layer 2 is more than 10 times the resistance value of the base substrate 1 . P-type impurities are diffused on the surface of the epitaxial semiconductor layer 2 to form two separate P-type diffusion regions 3 and 5 ...

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Abstract

The invention discloses a low voltage semiconductor voltage stabilizer, which has the characteristics of low leakage current and hard breakdown, simultaneously has low junction capacitance. The technical scheme is that the voltage stabilizer of the invention comprises two portions which are a double junction type diode and an additional PN junction, the double junction type diode is used as the main body of the voltage stabilizer, and the PN junction is used to forward conduct. Two opposite PN junctions are arranged in the double junction type diode, and an external capacitance is reduced because the two PN junctions are connected in series. On the other hand, when an imposed voltage leads a PN junction to reversely offset, the positive barrier of the other PN junction deadens the zener leakage of the reverse offset junction in early period, thereby improving the characteristics of soft breakdown. The invention is used in the field of semiconductor components.

Description

technical field [0001] The invention relates to a semiconductor voltage stabilizing device, in particular to a semiconductor voltage stabilizing device capable of reducing the characteristic reverse leakage current of a low-voltage Zener voltage stabilizing tube. Background technique [0002] Semiconductor zener voltage regulators are widely used in electronic products to clamp low-voltage voltages. This low-voltage voltage regulator is formed by a reverse-biased P+N+ junction. This kind of voltage regulator device relies on Zener breakdown formed by the current crossing the potential barrier in the range below 7V. This kind of low voltage voltage regulator device has a large leakage, which is the so-called "soft breakdown" characteristic. At the same time, the high doping required for the formation of Zener breakdown also causes the shortening of the depletion layer, which in turn results in high junction capacitance of the low-voltage regulator device, which is not conduci...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/04H01L29/861
Inventor 武鸿基
Owner 上海维恩佳得数码科技有限公司
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