Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Schottky barrier diode structure

A technology of Schottky potential and Schottky junction, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve unrealistic problems, achieve high reverse leakage current improvement, and improve the effect of soft breakdown characteristics

Active Publication Date: 2009-04-01
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In a specific process flow, the metal material that forms the Schottky barrier is certain, so it is not realistic to obtain better device performance by optimizing the barrier height

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Schottky barrier diode structure
  • Schottky barrier diode structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0013] Such as figure 2 As shown, in the Schottky barrier diode structure of the present invention, the Schottky junction formed by the metal and the N well is used as the positive pole, which is connected with the metal plate through the contact hole; The plates are connected, and multiple P+ regions separated from each other are set on the Schottky junction. The distance between any two P+ regions should meet the following conditions: when the reverse bias is applied, the P+ / N well junction depletion regions are connected to each other. Depending on the shape of the Schottky junction, the P+ region can be set to a corresponding shape. For example, if the shape of the Schottky junction is circular, the P+ region can be designed as a concentric ring, the Schottky junction is a regular polygon, and the P+ region It can be designed as a concentric regular pol...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

This invention discloses a Scottky barrier diode structure, which takes a Scotttky junction formed by metal and an N-trap as the positive to be connected with a metal positive pole plate by contact holes and takes an N-type semiconductor as the negative, and sets multiple P+ regions separated mutually, in which, the gap between any two P+ regions should meet the following condition: at reverse bias, the exhaust regions of P+ / N trap junctions are connected with each other.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a Schottky barrier diode structure. Background technique [0002] Schottky Barrier Diode SBD (Schottky Barrier Diode) is a low-power, high-current, ultra-high-speed semiconductor device. Its reverse recovery time is extremely short (can be as small as a few nanoseconds), the forward voltage drop is only about 0.4V, and the rectification current can reach several thousand amperes. SBD is now widely used in switching power supplies, frequency converters, drives and other circuits. [0003] The general structure of Schottky diodes is made of noble metals (gold, silver, aluminum, platinum, chromium, titanium, etc.) metal-semiconductor devices. Because there are a large number of electrons in the N-type semiconductor and only a small amount of free electrons in the metal, the electrons diffuse from the high-concentration semiconductor anode to the low-concentration metal anode. Obviously,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/872
Inventor 武洁李平梁徐向明
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com