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Metal gas mixing ion injector

An ion implanter and gas mixing technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, discharge tubes, etc., can solve the problems of poor effect, ion implanter function and limited application range, etc., and achieve low cost and expanded application range , using reliable effects

Inactive Publication Date: 2010-05-12
珠海市恩博金属表面强化有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this ion implanter can only produce one kind of metal ion, which cannot meet the needs of implanting composite ions on the surface of the workpiece to produce different functional surfaces. Although this machine can introduce nitrogen gas into the vacuum chamber through the catheter to implant nitrogen ions onto the surface of the workpiece , but since the nitrogen is not pre-introduced into the gas chamber in an ionized state, it is less effective
As a result, the function and scope of use of the ion implanter are limited

Method used

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Embodiment Construction

[0018] like figure 1 , figure 2 , image 3 , Figure 4 As shown, the present invention includes a metal ion source 1, a gas ion source 31, a metal ion source power supply system, a gas ion source power supply system, a vacuum chamber 2, a workpiece target stage 3, a motor 22, a vacuum system 4, a cooling system, and a nitrogen source 25. Mass flow valve 26 and control panel, gas supply system.

[0019] The metal ion source 1 and the gas ion source 31 are arranged on the top of the vacuum chamber 2 and communicate with the vacuum chamber 2, and the metal ion source 1 and the gas ion source 31 form an angle of 24° with the vertical direction respectively. .

[0020] The gas ion source 31 includes a cathode terminal 32, an anode terminal 35, a filament 38, a discharge chamber 39, a discharge chamber 40, a grid 41, a second grid 42, an anode shoe 43, a cathode shoe 44, a magnetic rod 45, Air inlet 46, insulation cylinder 47, upper cover 48, described upper cover 48 is arrang...

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Abstract

The disclosed metal gas mixed ion implantor comprises a metal ion source (1), an ion source power, a gas ion source (31), a gas supplying system, a gas ion source power, a vacuum chamber (2), a workpiece target platform (3), a vacuumizing system (4), a cooling system, and a control screen. This invention spreads application range of ion implantation technology greatly.

Description

technical field [0001] The invention relates to a metal gas mixed ion implanter. Background technique [0002] Conventional surface treatment technology, because it needs to be carried out in a high temperature environment, will change the overall size and surface finish of the workpiece, so that it needs to be finished after heat treatment, so it cannot meet the requirements of use, and the heat treatment layer is prone to surface peeling and peeling phenomenon. [0003] Ion implantation technology is a high-tech material surface modification developed internationally in recent years. Its basic principle is: use an ion beam with an energy of tens to hundreds of keV to enter the material, the ion beam and the material A series of physical and chemical interactions will occur in the atoms or molecules in the material, and the incident ions will gradually lose energy, and finally stay in the material, causing changes in the surface composition, structure and properties of the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/317C23C14/48H01L21/265
Inventor 陶士慧马山明邵先华叶围洲蔡恩发蔡坚将吴观绵吴九妹蔡秀芳
Owner 珠海市恩博金属表面强化有限公司
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