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Amplified solid-state image pickup device

A technology for solid-state imaging devices and pixels, which is applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve problems such as the reduction of the transfer gate 44, the influence of afterimage characteristics, and the inability to fully read signal charges.

Inactive Publication Date: 2007-07-25
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, since the signal charge transfer gate 44 is disposed adjacent to the drain region 45, the transfer gate 44 becomes smaller in the above-mentioned arrangement, and the signal charge cannot be completely read out.
This problem affects afterimage characteristics, and is accompanied by deterioration of image quality such as signal linearity deterioration

Method used

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Experimental program
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Effect test

Embodiment approach 1

[0069]FIG. 1 is a schematic plan view showing a pixel portion of an amplified solid-state imaging device according to Embodiment 1. FIG. The layout of this device is roughly divided into a photodiode section 1 , a floating diffusion capacitance section 5 , and a transistor arrangement section 6 . Transistors (not shown), such as reset transistors, drive transistors, and selection transistors, are arranged in the transistor arrangement unit 6 . A signal charge transfer gate 4 is provided between the photodiode unit 1 and the floating diffusion capacitor unit 5. 7 denotes a light-shielding aluminum opening. 8 indicates an inactive area.

[0070] The signal charge photoelectrically converted and stored in the photodiode unit 1 is transferred to the floating diffusion capacitor unit 5 through the signal charge transfer gate 4 . The signal charge is converted into a voltage by the floating diffusion capacitance section 5 , and amplified or impedance converted by the driving trans...

Embodiment approach 2

[0080] An amplifying solid-state imaging device according to Embodiment 2 will be described with reference to FIG. 2 showing a cross-sectional structure of a GND contact in a pixel.

[0081] A first conductivity type well region 13 and a first conductivity type surface layer 14 are formed in the second conductivity type photodiode injection region 11 . An in-pixel GND contact 12 is provided through an insulating layer 15 and is connected to the surface layer 14 of the first conductivity type.

[0082] The present embodiment is characterized in that the first conductivity type surface layer 14 is also used instead of the contact injection portion for the connection between the in-pixel GND contact 12 and the first conductivity type well region 13 . The impurity concentration of the first conductivity type surface layer 14 is set to 1.0×10 13 ~1.0×10 15 . Usually the first conductivity type injection area used in the contact injection part is set to 1.0×10 13 ~1.0×10 14 , s...

Embodiment approach 3

[0084] An amplified solid-state imaging device according to Embodiment 3 will be described with reference to FIGS. 3A to 3C showing pixel layouts. FIG. 3A is a plan view schematically showing an imaging area (only four pixels are shown) 9 . 3B and 3C are plan views each showing the layout in a pixel.

[0085] The present embodiment is characterized in that two or more types of pixels having different GND contact positions within the pixel are arranged in the imaging area 9 . That is, in the pixel A, the in-pixel GND contact 2 a and the first conductivity type well region 3 a are arranged on the upper right side of the photodiode 1 . In the pixel B, the in-pixel GND contact 2 b and the first conductivity type well region 3 b are arranged on the upper left side of the photodiode 1 . As shown in FIG. 3A , pixels A are arranged on the upper left and lower right in the imaging area 9 , and pixels B are arranged on the lower left and upper right.

[0086] The light incident on ea...

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Abstract

The present inventive amplified solid-state image pickup devece two-dimensionally arranges a plurality of pixels, which include a second conductivity type photodiode part (1) formed in a first conductivity type well region and an amplifying transistor (6) for amplifying charges accumulated on a photodiode part and outputting them. Furthermore, in the region of the photodiode part, a contact (2) is arranged in a pixel for supplying the well region with a reference voltage. Thus, afterimage characteristics are improved and rational GND contact arrangement in the pixel, not affecting the optical characteristics, is provided.

Description

technical field [0001] The present invention relates to an amplified solid-state imaging device having a relatively large imaging area, and relates to a layout in which pixel contacts for stabilizing image quality are arranged to maximize pixel performance. Background technique [0002] The overall structure of a general amplifying solid-state imaging device having four transistors in one pixel will be described with reference to FIG. 4 . A plurality of pixels are two-dimensionally arranged in m columns×n rows in the imaging region 34 , and each pixel includes a photodiode 20 , a transfer transistor 21 , a reset transistor 22 , a drive transistor 23 , and a selection transistor 24 . The signal charges stored by photoelectric conversion by the photodiode 20 are transferred through the transfer transistor 21 , and input to the gate of the drive transistor 23 after voltage conversion. The drive transistor 23 forms a source follower from a pixel portion power supply 33 and a lo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H04N5/335
CPCH01L27/14609H01L27/14636H01L27/14603H01L27/14643H04N5/335H04N25/00H01L27/146
Inventor 稻垣诚井垣和明小岛基弘
Owner PANASONIC CORP
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