Display Device
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embodiment 1
[0064]In this embodiment, an organic EL display device which achieves high-definition display will be described. In the organic EL display device, a shape of a partition is adjusted, and the height of the partition is controlled to be greater than or equal to 0.5 μm and less than or equal to 1.3 μm.
[0065]FIG. 1 is a cross-sectional view illustrating a specific structure of an organic EL display device 100. In the structure illustrated in FIG. 1, a wiring layer is formed between a light-emitting element and a transistor. Thus, even when the number of transistors included in each pixel is increased in accordance with high-definition display, the pixel can be miniaturized.
[0066]As illustrated in FIG. 1, the organic EL display device 100 includes a first substrate 110, a base layer 101 over the first substrate 110, a transistor 102 and an insulating layer 103 over the base layer 101, a first interlayer film 104 over the insulating layer 103, a wiring 105 electrically connected to the tr...
embodiment 2
[0202]In this embodiment, an organic EL display device 200 which enables high-definition display will be described. In the organic EL display device 200, a shape of a partition is adjusted, and the height of the partition is controlled to be higher than or equal to 0.5 μm and less than or equal to 1.3 μm.
[0203]Note that except that a wiring layer is not formed between a light-emitting layer and a transistor, the organic EL display device 200 described in this embodiment can have a structure similar to that of the organic EL display device 100 described in Embodiment 1. Thus, Embodiment 1 can be referred to for the detailed description.
[0204]As illustrated in FIG. 8, the organic EL display device 200 includes a first substrate 240, a base layer 204 over the first substrate 240, a transistor 250 over the base layer 204, an insulating layer 214, a first interlayer film 216 over the insulating layer 214, a light-emitting element 230 electrically connected to the transistor 250, and a fi...
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