Plasma uniformity control by gas diffuser hole design
a technology of gas diffuser and uniformity control, which is applied in the direction of coating, chemical vapor deposition coating, electric discharge tubes, etc., can solve the problems of film thickness and film property uniformity control of large area plasma-enhanced chemical vapor deposition (pecvd)
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[0053] The invention generally provides a gas distribution assembly for providing gas delivery within a processing chamber. The invention is illustratively described below in reference to a plasma enhanced chemical vapor deposition system configured to process large area substrates, such as a plasma enhanced chemical vapor deposition (PECVD) system, available from AKT, a division of Applied Materials, Inc., Santa Clara, Calif. However, it should be understood that the invention has utility in other system configurations such as etch systems, other chemical vapor deposition systems and any other system in which distributing gas within a process chamber is desired, including those systems configured to process round substrates.
[0054]FIG. 1 illustrates cross-sectional schematic views of a thin film transistor structure. A common TFT structure is the back channel etch (BCE) inverted staggered (or bottom gate) TFT structure shown in FIG. 1. The BCE process is preferred, because the gate...
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