Systems and apparatus for atomic-layer deposition

Abstract

The present inventors devised unique atomic-layer deposition systems, methods, and apparatus suitable for aluminum-oxide deposition. One exemplary method entails providing an outer chamber enclosing a substrate, forming an inner chamber within the outer chamber, and introducing an oxidant into the inner chamber, and introducing an aluminum precursor into the inner chamber. The inner chamber has a smaller volume than the outer chamber, which ultimately requires less time to fill and purge and thus promises to reduce cycle times for deposition of materials, such as aluminum oxide.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] The present application is a divisional of U.S. application Ser. No. 10 / 137,168, filed May 2, 2002, which is incorporated herein by reference in its entirety.TECHNICAL FIELD [0002] This invention concerns methods of making integrated circuits, particularly layer formation techniques, such as chemical-vapor deposition and atomic-layer deposition. BACKGROUND OF INVENTION [0003] Integrated circuits, the key components in thousands of electronic and computer products, are interconnected networks of electrical components fabricated on a common foundation, or substrate. Fabricators generally build these circuits layer by layer, using techniques, such as deposition, doping, masking, and etching, to form and interconnect thousands and even millions of microscopic transistors, resistors, and other electrical components on a silicon substrate, known as a wafer. [0004] One common technique for forming layers in an integrated circuit is called chem...

AI Technical Summary

Benefits of technology

This approach enables faster and more efficient deposition cycles, potentially increasing production rates and achieving uniform coverage and filling of structural features, addressing the limitations of existing ALD systems for integrated circuit fabrication.

Problems solved by technology

Conventional chemical-vapor-deposition (CVD) systems suffer from at least two problems.

First, conventional CVD systems generally form non-uniformly thick layers that include microscopic hills and valleys, and thus generally require use of post-deposition planarization or other compensation techniques.

Second, it is difficult, if not impossible, for CVD to provide uniform coverage of trench sidewalls or complete filling of holes and trenches.

However, the present inventors have recognized that the equipment and processes reported as optimal for thin-film head applications suffer from some limitations relative to use in fabricating integrated circuits.

Moreover, the reported equipment uses a larger than desirable reaction chamber, which takes longer to fill up or pump out, and thus prolongs the duration of each deposition cycle.

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