Integrated laser with perot-fabry cavity
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[0011] A monolithic component 1 in accordance with the invention as shown in FIG. 1 comprises two sections 21, 22, of which a first section 21 is a Fabry-Perot cavity laser and the second section 22 is a subcomponent of the component 1. The semiconductor laser first section 21 is made up of a stack of layers 2, 3, 4, 5, 6 on a substrate and including an active layer 4 of GaInAsP, for example, and electrical and optical confinement layers 3, 5. The stack of layers is terminated at the top and at the bottom by respective surface electric contact layers 6 and 2 that are used to bias the laser section 21. The laser layer 4 is bordered above and below by the confinement layers 5 and 3, respectively.
[0012] A laser cavity 7 is formed in a manner known in the art by cutting the layers, including the active layer 4, thereby producing mirror faces 8 and 9 that are treated to have the necessary coefficients of reflection, so that the active layer 4 is in a Fabry-Perot cavity 7. The laser secti...
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Abstract
Description
Claims
Application Information
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