Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Planar inductor using liquid metal mems technology

An inductive, liquid technology used in inductors, coreless inductors, fixed inductors, etc.

Inactive Publication Date: 2007-05-30
AGILENT TECH INC
View PDF1 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although great efforts have been made in the development of various microswitch technologies, little focus has been placed on the development of other circuit components for use with these devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Planar inductor using liquid metal mems technology
  • Planar inductor using liquid metal mems technology
  • Planar inductor using liquid metal mems technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0010] The best mode for carrying out the present invention is described in detail below. This description is intended to illustrate the invention and should not be considered as limiting the invention.

[0011] In this application, various MEMS device fabrication processes and techniques known to those skilled in the art will be mentioned. Many of these processes and techniques can be borrowed from semiconductor device fabrication techniques, such as photolithography, thin film deposition and growth techniques, etching processes, etc., while others have been developed and / or modified specifically for MEMS applications. Furthermore, the devices and techniques now described focus on the use of liquid metals in inductors. Examples of suitable liquid metals include mercury, gallium alloys and indium alloys (eg Galinstan or GaInSn). Other examples of suitable liquid metals with acceptable conductivity, stability and surface tension properties are known to those skilled in the ar...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Using MEMS device design and fabrication techniques, liquid metal inductors (100, 200, 300) can be formed. Because of the common fabrication techniques, liquid metal inductors can be more easily integrated with certain MEMS microswitches.

Description

technical field [0001] The present invention relates to planar inductors. Background technique [0002] With the introduction of micromachining techniques and microelectromechanical systems (MEMS) in the 1980s, many methods of mechanical actuation have been developed. Many different micromechanical switches (microswitches) have been developed using different actuation methods and design techniques. Many microswitch designs use solid-solid contact switches, which suffer from some of the same problems as larger size mechanical switches, such as wear on the switch contacts and signal bounce. Various configurations of liquid metal microswitches have been realized, and the differences between these configurations include: the mechanism used to actuate the switch (e.g., move a liquid metal droplet or "slug"), the device and technique for loading the switch with liquid metal, and the fabrication technology. Although great efforts have been made in the development of various micr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01F17/00H01F41/00
CPCH01F21/005H01L2924/0002H01F17/0006H01F21/04H01L27/08H01L28/10H01F41/041H01L23/5227H01L2924/00
Inventor 蒂莫西·贝凌
Owner AGILENT TECH INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products