Sputtering target, optical information recording medium and process for producing the same
A recording medium and sputtering target technology, applied in the field of sputtering targets, can solve the problems of poor optical properties, such as poor amorphous state, poor amorphous state, good film forming speed, etc., and achieve improved productivity, high transmittance, mechanical properties excellent effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1-6
[0047] will be equivalent to 4N of 5μm or less In 2 o 3 Powder, SnO 2 Powder, Ta 2 o 5 Powder, Y 2 o 3 powder, and ZnO powder equivalent to 4N with an average particle diameter of 5 μm or less, were prepared according to the compositions shown in Table 1 and Table 2, mixed by wet method, dried and calcined at 1100°C.
[0048] Then, the calcined powder was finely pulverized by wet method to an average particle diameter of 1 μm, and then a binder was added and granulated by a spray dryer. The granulated powder is then cold-pressed and sintered at 1300°C in an oxygen environment under normal pressure, and finally the sintered material is machined into the shape of a target. The composition and composition ratio of this target (In / (In+Zn+Sn+A), Zn / (In+Zn+Sn+A), Sn / (In+Zn+Sn+A), A / (In+ Zn+Sn+A)) are shown in Table 1 and Table 2.
[0049] example
composition
composition
In / (In+Zn+Sn+A)
Zn / (In+Zn+Sn+A)
Sn / (In+Zn+Sn+A) ...
PUM
Property | Measurement | Unit |
---|---|---|
particle size | aaaaa | aaaaa |
refractive index | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com