Solid-state imaging device and manufacturing method thereof

Abstract

The invention provides a solid-state imaging device, comprising: a photodiode (1) that converts incident light into charges, a first dielectric film (82) formed on the upper part of the photodiode (1), and The second dielectric film (83) and the third dielectric film (21) formed on the top of ), the hollow layer (9) provided between any of the first to third dielectric films.

Description

technical field [0001] The present invention relates to a solid-state imaging device capable of being mounted in a digital camera, an integrated video camera, etc., and a method of manufacturing the same. Background of the invention [0002] In recent years, solid-state imaging devices have been widely provided for use in integrated video cameras, imaging sections of digital cameras, and the like. Among them, a CCD-type solid-state imaging device of an interline transfer method (hereinafter referred to as an IT-CCD) has attracted attention in particular because of its low-noise characteristics. [0003] figure 1 It is a schematic diagram showing the structure of a conventional IT-CCD. [0004] like figure 1 As shown, the solid-state imaging device 100 includes: a photodiode 1 having a photoelectric conversion function, a vertical transfer part 2 with an embedded channel structure that transfers signal charges to the vertical direction, a vertical transfer gate 3 that cont...

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Problems solved by technology

[0014] The miniaturization of the unit pixel is related to the reduction of the opening width of the photodiode 1 as the opening of the light-shielding film 6. There are also cases where the film thickness of the vertical transfer gate 3 and the reduction ratio of the opening width cannot be thinned. A narrow vertical pit-like structure is formed, so it is difficult to achieve the concentration of incident light

[0015] In addition, shortening the exit pupil distance of the camera lens means that the ratio of the angle of the incident light incident on the solid-state imaging device deviated from the vertical direction increases, so it is difficult to effectively condense the incident light onto the photodiode 1.

[0016] In addition, according to the technology disclosed in Japanese Patent No. 2869280, although the water-soluble resin is applied and the upper part is covered with other resin, and then the water-soluble resin is dissolved to form the gas layer, but for the technology of this conventional example, it is difficult to If the surface of the solid-state imaging device with severe unevenness is coated with water-soluble resin in a uniform thickness, liquid will accumulate in the concave part, or the entire concave part will be buried with the resin, or a part of the concave part will form bubbles, resulting in an area where the resin cannot be coated. Therefore, it is not a manufacturing method that can obtain uniform characteristics

[0017] In addition, according to the technique disclosed in JP-A-7-45805, although a high-refractive-index material such as a titanium oxide film with a refractive index of about 2.0 is used on the top of the photodiode, total reflection at the boundary is used to improve light concentration. , but because the material with high refractive index also increases the light absorption rate at the same time, there is a bad effect of attenuation before the light is incident on the photodiode

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