Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Stacked photovoltaic element and current balance adjustment method

A photoelectric element and current balance technology, applied in the field of solar cells, can solve the problems of not being able to obtain a large open circuit voltage, current balance deviation, and difficult to manage film thickness

Inactive Publication Date: 2004-11-03
CANON KK
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, the range of the open circuit voltage that can be used in the middle unit and the bottom unit of the above-mentioned three-layer unit is limited to a narrow range of 0.48 (eV) to 0.54 (eV), and there is a limit in the bandgap adjustment method
Moreover, the adjustment of the current balance has to mainly rely on the adjustment of the film thickness
[0019] If the adjustment of the current balance is only limited to the film thickness, in addition to not being able to obtain a large open circuit voltage as a three-layer unit, there is also no wavelength selectivity in the spectral sensitivity spectrum of each constituent unit, and photoelectric conversion cannot be effectively implemented. The problem
Furthermore, it is difficult to manage the film thickness. If the film thickness of the middle unit varies, the generated current in the bottom unit also fluctuates, or if the film thickness of the bottom unit varies, the generated current in the middle unit fluctuates. As a result, there is a current balance shift, Problems such as reduction in conversion efficiency
[0020] In addition, the same problem also exists in the cell having the i-layer of the μc-Si:H thin film described in JP-A-11-243218

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Stacked photovoltaic element and current balance adjustment method
  • Stacked photovoltaic element and current balance adjustment method
  • Stacked photovoltaic element and current balance adjustment method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0074] This example is made figure 1 Examples of optoelectronic components. First, use Figure 9 , Figure 10 The setup shown produces substrates for photovoltaic elements of the present invention.

[0075] Figure 9 The device 301 is a roll-to-roll film forming device capable of simultaneously and continuously forming different films in different spaces on a belt-shaped support 302 . 303, 304, and 305 are vacuum chambers for forming thin films by DC sputtering, and the formed thin films can be changed by changing the target material. Using a Ti target in the vacuum chamber 303, an Ag target in 304, and a ZnO target in 305, a Ti layer, an Ag layer, and a ZnO layer can be sequentially formed on the support.

[0076] Inside each vacuum chamber, there is a heater 310 for heating the strip-shaped support 302 from the back surface, and the strip-shaped support 302 is sandwiched, and a target 311 and an electrode 312 connected to the target are provided on the opposite side. A...

Embodiment 2

[0107] The same photovoltaic element as in Example 1 was formed except that a 2.8 μm ZnO layer by sputtering was used as a substrate instead of forming a ZnO layer by an electrolytic method as the lower transparent conductive layer 104 . As a result, it was found that, similarly to Example 1, good characteristics and yield were obtained.

Embodiment 3

[0109] In addition to flowing through the pH of 0.01 sccm in the vacuum chamber 503 during the formation of the i-layer of the bottom unit of Example 1 3 Except for the gas, the same photovoltaic element as in Example 1 was fabricated. As a result, it was found that, similarly to Example 1, good characteristics and yield were obtained.

[0110] In this way, according to the multilayer photoelectric element and the current balance adjustment method of the embodiment of the present invention, it is possible to manufacture a photoelectric element with high conversion efficiency at a high yield.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A stacked photovoltaic element contains a structure formed by sequentially arranging a metal layer 103, a lower transparent conductive layer 104, a first n-layer 105 of non-single-crystal silicon, a first i-layer 106 of microcrystal silicon, a first player 108 of non-single-crystal silicon, a second n-layer 109 of non-single-crystal silicon, a second i-layer 110 of microcrystal silicon and a second player 112 of non-single-crystal silicon on a support body 102. The first i-layer 106 and the second i-layer 110 are made to contain phosphor and the content ratio R1 of phosphor to silicon of the first i-layer 106 and the content ratio R2 of phosphor to silicon of the second i-layer 110 are defined by the formula of R2 < R1. With this arrangement, photovoltaic elements showing a high conversion efficiency can be manufactured with a high yield factor.

Description

technical field [0001] The present invention relates to optoelectronic components, in particular to solar cells. In particular, the present invention relates to improvement of conversion efficiency and manufacturing yield in a tandem solar cell having a pin junction formed of two or more i-layers using a microcrystalline silicon (μc-Si:H) thin film. Furthermore, the present invention relates to a method of adjusting the current balance of each constituent unit in a tandem solar cell composed of an i-layer using a microcrystalline silicon thin film. Background technique [0002] In recent years, thin-film solar cells using silicon-based non-single crystal (and non-polycrystalline) semiconductors, which are one of the optoelectronic elements, are more attractive than solar cells using single crystal or polycrystalline semiconductors because they can be placed on glass or metal plates, etc. Since it is formed over a large area on a relatively cheap substrate and the film thick...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/04H01L31/00H01L31/06H01L31/075H01L31/076H01L31/18H01L31/20
CPCH01L31/076Y02E10/548Y02E10/50
Inventor 狩谷俊光
Owner CANON KK
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com