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Method for suspension etching one face of film

A thin-film, single-sided technology, which is applied in the field of single-sided suspended corrosion thin film method, can solve the problems of metal leads being damaged and difficult to remove, such as using acid solution or alkali solution to remove them, affecting the quality of the film and the accuracy of the test, etc. , to achieve the effect of simple structure and easy processing

Inactive Publication Date: 2004-02-25
INST OF ELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

On the other hand, because the black glue remaining on the film is difficult to remove, if it is removed by corrosive liquid such as acid solution or alkali solution, the metal lead will be damaged
Especially when the corrosion is close to the film, due to the non-uniformity of the thickness of the silicon wafer and the non-uniformity caused by the etching, the silicon in a certain part of the film remains, and some black glue remains on the film, which affects the quality of the film and the accuracy of the test. accuracy

Method used

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  • Method for suspension etching one face of film
  • Method for suspension etching one face of film
  • Method for suspension etching one face of film

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Embodiment Construction

[0012] Such as figure 2 As shown, when the single-side suspension etching method is used, the etched silicon wafer has been protected with black glue (asphalt—its viscosity is high) on the side with metal leads, and the thickness of the silicon wafer is only about 20-30 μm. At this time, the silicon wafer is suspended on the etching solution for etching, the distance between the silicon wafer and the etching solution is 0-3 cm, the gas generated during the etching process will also become an upward buoyancy force, and the downward force of the silicon wafer will mainly It is affected by the pressure of the atmosphere and the gravity of the silicon wafer. Obviously, the film eliminates the pressure of the etching solution, and the gas generated will also have an upward force. Since the PTFE bracket we designed for etching has groove A, it can The gas generated under the silicon wafer can be discharged from groove A, and the film is etched in this way, so that the film reduces ...

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Abstract

The single-face suspension corrosion method of film includes the following steps: using black glue-as phalt to protect one surface with metal lead film of silicon wafer; corroding the silicon wafer to make its thickness remain 20 micrometers-30 micrometers; cleaning black glue and suspending the silicon wafer on the supporting frame; and continuously corroding silicon wafer to the required size by utilizing flowing corrosive solution under the supporting frame. It can obtain clean film surface, and can prepare the large-area ultrathin type Si3N4 film (thickness is above 50 nm) with thermo-couple and electrode.

Description

technical field [0001] The invention relates to micro-nano processing technology, in particular to a single-side suspended corrosion film method. Background technique [0002] Conventional single-sided wet etching of silicon wafers usually uses a single-sided protection method, using black glue (asphalt - its viscosity is high) to protect the side with the metal lead film so that it is not exposed to the etching solution. After the film is corroded, due to the large surface area of ​​the film, when removing the black glue, if a negative glue cleaning agent is used to dissolve the black glue, since the corroded film is only about 1 μm or thinner, the volume will expand when the asphalt is dissolved. Will cause membrane rupture. Its strength is as figure 1 shown. On the other hand, because the black glue remaining on the film is difficult to remove, if it is removed by corrosive solutions such as acid solution or alkali solution, the metal lead will be damaged. Especially ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/08H01L21/306H01L21/465
Inventor 陈绍风张建刚夏善红
Owner INST OF ELECTRONICS CHINESE ACAD OF SCI
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