Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Reversible molecular electronic device based on technique of scan tunnel microscope and its manufacturing method

An electronic device and scanning tunneling technology, applied in the field of electrically reversible molecular electronic devices and their fabrication

Inactive Publication Date: 2003-10-01
FUDAN UNIV
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The function of molecular electronic devices is mainly based on the behavior and properties of individual molecules. Many current microelectronic technologies can no longer meet the requirements, so a new process technology is required

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Reversible molecular electronic device based on technique of scan tunnel microscope and its manufacturing method
  • Reversible molecular electronic device based on technique of scan tunnel microscope and its manufacturing method
  • Reversible molecular electronic device based on technique of scan tunnel microscope and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Embodiment 1 Prepare Ag single crystal thin film by epitaxial method on the newly stripped mica surface, then prepare vertically oriented CPVB monolayer film on the surface of Ag single crystal thin film (solvent adopts acetonitrile-benzene mixed solution, CPVB solution Concentration is 10 -5 About M, immerse the base in the base to absorb into a film). The Ag substrate is used as the substrate of STM, and the STM probe adopts Pt-Ir alloy wire. The STM instrument works in the constant high mode, and the working voltage is 0.005-0.1 volts, and the thin film device is in the "0" state at this time. A positive square wave pulse voltage (1-4 volts, the probe is positive and the substrate is negative) is applied between the STM probe and the substrate, and the CPVB molecules under the needle tip are pulled up for a certain distance, that is, the "1" state, This process is "writing". At the same position, if a reverse pulse voltage (1-4 volts, the base is positive), the CP...

Embodiment 2

[0028] Example 2 The compound uses PDVB, the solvent uses acetone, and the solution concentration is 10 -6 -10 -5 M. The preparation process of the film layer and the device assembly are the same as Example 1. The external working voltage of its reversible conversion is a square wave pulse voltage of 3-4 volts, that is, writing and erasing can be realized, and can be repeated.

Embodiment 3

[0029] Example 3 The compound uses ACVB, the solvent uses acetone-acetonitrile mixed solution, and the solution concentration is 5×10 -5 M or so. The preparation process of the film layer and device assembly are the same as Example 1. The external working voltage of its reversible conversion is a square wave pulse voltage of 3-4 volts, that is, writing and erasing can be realized, and can be repeated.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Concentrationaaaaaaaaaa
Login to View More

Abstract

An electrically reversible molecular electronic device based on scanning tunnel microtechnique is composed of substrate with an electrically conductive surface having molecular-class smoothness, an organic molecular layer which is a vertically orientated single molecular layer, and the probe which is the needle tip in scanning tunnel microscope. At the action of positive and negative pulses, its states can be reverisibly switched.

Description

technical field [0001] The invention belongs to the technical field of molecular electronic devices, and in particular relates to an electrically reversible molecular electronic device based on scanning tunneling microscopy technology and a manufacturing method thereof. technical background [0002] The development trend of large-scale integrated circuits is that the size is constantly shrinking, and it is about to enter the era of nanoelectronic devices. There are two ways to develop nanoelectronic devices: one is to use the original microelectronic processing technology to keep the size of the device down to the nanoscale; the other is to realize the function of electronic devices by manipulating and assembling organic molecules, that is, molecular electronic devices . The latter is a new field, and a lot of manpower and material resources have been invested in research and development at home and abroad. [0003] The functions of molecular electronic devices are mainly ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01Q60/16H01L51/00
CPCB82Y10/00H10K10/701
Inventor 徐伟华中一
Owner FUDAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com