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Conductive nitride film, process for producing the same, and antireflection object

A nitride film, anti-reflection technology, applied in non-metallic conductors, conductive layers on insulating carriers, sputtering, etc. question

Inactive Publication Date: 2004-10-13
ASAHI GLASS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the resistivity and other physical properties of the titanium nitride film produced by sputtering are prone to change with the residual gas (mainly H) in the chamber. 2 O) The pressure changes, and the characteristics between batches are prone to differences
[0004] Therefore, there is a problem that in order to remove the residual gas, the vacuum evacuation time must be prolonged, so that the productivity cannot be improved.
[0005] In addition, the resistance of the titanium nitride film tends to change due to heat, and the heat resistance is not enough.
For example, when forming a multilayer conductive antireflection film using a titanium nitride film on the CRT panel glass to prevent reflection on the CRT surface (observer side surface), if no special method is used, the CRT manufacturing process will It will withstand heat treatment at about 450°C, which will cause problems such as reduced electrical conductivity.
[0006] Regarding the anti-reflection film, although U.S. Patent 5,091,244, U.S. Patent 540,773 etc. have proposed schemes, they mainly find the anti-reflection performance for the incident light coming from the film surface, and for the light coming from the substrate side (opposite side with the film surface) The anti-reflection performance of the incident light is not sufficient

Method used

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  • Conductive nitride film, process for producing the same, and antireflection object
  • Conductive nitride film, process for producing the same, and antireflection object

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] At a residual air pressure of 1.3 x 10 -5 Torr (1.73×10 -3 Pa) (approximately 5×10 -6 Torr (6.65×10 -4 Pa) is large, residual gas is large), Ar:N 2 =9:1 (volume ratio) mixed gas (6mm Torr (798mmPa)) atmosphere, at a power density of 2.2W / cm 2 Under the condition of , the Ti target containing Pd5at% (only Pd except Ti) is used to form a film on the glass substrate by the magnetron DC sputtering method. The obtained nitride film is a titanium nitride film (TiN x : Pd5at% film), the film thickness is 20nm.

[0051] The surface resistance (R s ), the difference in resistance between batches after 5 batches of film formation, and the change in resistance after heat resistance test (250°C, 30 minutes). The results are shown in Table 1.

Embodiment 2

[0053] Film formation was carried out in the same manner as in Example 1, except that the target used in Example 1 was replaced with a Ti target containing Ni 5 at % (only Ni in addition to Ti). The obtained nitride film is a titanium nitride film (TiN x : Ni5at% film), the film thickness is 20nm. The same measurement as in Example 1 was performed. The results are shown in Table 1.

Embodiment 3

[0055] A film was formed in the same manner as in Example 1 except that the target used in Example 1 was replaced with a Ti target. The obtained nitride film is titanium nitride film (TiN x film), the film thickness is 20nm. The same measurement as in Example 1 was performed. The results are shown in Table 1.

[0056] As can be seen from Table 1, with TiN x films compared to the inventive TiN x : Pd5at% film and TiN x : The difference in resistance between batches of Ni5at% film and the resistance change after the heat resistance test are much smaller, and the repeatability and heat resistance are also very good.

[0057] Example

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Abstract

An excellent heat-resistant electroconductive nitride film containing Ti and / or Zr, and at least one metal selected from the group consisting of Al, Mo, Cr, Nb, Hf, Ni, Co, Fe, Pd, Ag, Au and Pt, its production method and an antireflector using the electroconductive nitride film.

Description

technical field [0001] The present invention relates to a conductive nitride film, a method for preparing the same, and an anti-reflector using the conductive nitride film. Background technique [0002] Titanium nitride film has electrical conductivity and appropriate optical absorption, so it can be used as an antistatic film for cathode ray tubes (CRTs) and the like. Titanium nitride film also has heat ray blocking performance, so it can be used as a heat ray protection film for window glass of automobiles and the like. [0003] However, the resistivity and other physical properties of the titanium nitride film produced by sputtering are prone to change with the residual gas (mainly H) in the chamber. 2 O) The pressure changes, and the characteristics between batches are prone to differences. [0004] Therefore, there is a problem that in order to remove the residual gas, the evacuation time must be prolonged, so that the productivity cannot be improved. [0005] In add...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/06H01B1/06
CPCH01B1/06C23C14/0641
Inventor 藤野正美佐藤一夫光井彰竹田谕司堀江则俊
Owner ASAHI GLASS CO LTD
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