Selenium element penetrating core-shell structure quantum dot and preparation method thereof

A technology of core-shell structure and quantum dots, which is applied in the field of semiconductor functional materials, can solve the problems of low quantum yield and small size of quantum dots, and achieve the effects of high fluorescence quantum yield, narrow half-peak width, and good photochemical stability

Active Publication Date: 2022-05-17
HENAN UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention proposes a core-shell structure quantum dot through which selenium element penetrates and its preparation method.

Method used

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  • Selenium element penetrating core-shell structure quantum dot and preparation method thereof
  • Selenium element penetrating core-shell structure quantum dot and preparation method thereof
  • Selenium element penetrating core-shell structure quantum dot and preparation method thereof

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preparation example Construction

[0060] A preparation method of core-shell quantum dots with selenium element running through, the method comprising the following steps:

[0061] 1. Preparation of CdSe nuclei;

[0062] 2. A CdZnSe shell layer is grown over the CdSe crystal core to form a CdSe / CdZnSe core-shell structure quantum dot.

[0063] A preparation method of core-shell quantum dots with selenium element running through, the method further comprises the following steps:

[0064] 3. On the basis of CdSe / CdZnSe core-shell quantum dots, a ZnSe shell layer is coated and grown to form CdSe / CdZnSe / ZnSe core-shell quantum dots.

[0065] A preparation method of core-shell quantum dots with selenium element running through, the method further comprises the following steps:

[0066] 4. A ZnSeS shell layer is grown on the basis of CdSe / CdZnSe / ZnSe core-shell structure quantum dots to form CdSe / CdZnSe / ZnSe / ZnSeS core-shell structure quantum dots.

[0067] The described preparation of CdSe nuclei, the specific me...

Embodiment 1

[0088] The synthesis steps of CdSe nuclei are as follows:

[0089] Preparation of cadmium precursor: a cadmium source is mixed with an organic solvent to form an organic mixed solution, heated to 240° C. under anhydrous oxygen conditions to obtain a cadmium-containing precursor solution; the cadmium source is cadmium oxide, and the organic solvent is octadecene and Oleic acid, the mass ratio of cadmium oxide, octadecene and oleic acid in the cadmium-containing organic mixed solution is 1:6.5:6.9;

[0090] Preparation of selenium precursor: selenium powder was dissolved in tri-n-octylphosphorus to obtain 2mol / L TOP-Se precursor;

[0091] Preparation of CdSe nuclei: 0.9 mmol cadmium precursor and 5.1 g octadecene solution were mixed in a 100 mL three-neck flask, heated to 240 °C under anhydrous oxygen conditions, and 0.8 mmol TOP-Se solution was injected; , the UV absorption spectra of CdSe nuclei are as follows figure 2 As shown, with the progress of the reaction, the absorp...

Embodiment 2

[0093] Preparation of CdSe / CdZnSe core-shell quantum dots:

[0094] Preparation of zinc precursor: an organic solvent is mixed with a zinc source to form an organic mixed solution, which is heated to 180° C. under anhydrous oxygen to obtain a zinc-containing precursor solution; the zinc source is zinc acetate, and the organic solvent is 18 ene and oleic acid, the mass ratio of zinc acetate, octadecene and oleic acid in the zinc-containing organic mixed solution is 1:4.3:4.9;

[0095] Preparation of cadmium-zinc-selenium mixed precursor: the cadmium precursor, zinc precursor and TOP-Se precursor were mixed uniformly in different proportions under anhydrous oxygen conditions to obtain three first mixed solutions; The mass ratio of Cd:Zn:Se ​​in the mixed solution is 6.4:2:1, the mass ratio of Cd:Zn:Se ​​in the second first mixed solution is 4.3:4:1, respectively, and the Cd in the third first mixed solution is : The mass ratio of Zn:Se ​​is 2.1:6:1 respectively;

[0096] The p...

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Abstract

The invention provides a core-shell structure quantum dot penetrated by a selenium element, the structure of the core-shell structure quantum dot comprises a CdSe crystal nucleus and a shell layer penetrated by the selenium element, and the shell layer penetrated by the selenium element grows on the outer layer of the CdSe crystal nucleus; the shell layer through which the selenium element penetrates comprises a CdZnSe shell layer, and the CdZnSe shell layer grows on the outer layer of the CdSe crystal nucleus. The invention relates to a preparation method of a core-shell structure quantum dot penetrated by selenium element. The method comprises the following steps: 1, preparing a CdSe crystal nucleus; and 2, coating and growing a CdZnSe shell layer outside the CdSe crystal nucleus to form the CdSe / CdZnSe core-shell structure quantum dot. According to the preparation method, the problems that the quantum yield is reduced, the fluorescence half-peak width is widened and the like due to the inherent large lattice mismatching degree between a shell material and a crystal nucleus, the low shell growth temperature and the like in the shell growth process of the existing selenium element penetrating core-shell structure quantum dots are solved.

Description

technical field [0001] The invention relates to a core-shell structure quantum dot penetrated by selenium element and a preparation method thereof, and belongs to the technical field of semiconductor functional materials. Background technique [0002] Semiconductor quantum dots have the advantages of continuously adjustable fluorescence emission peak, high quantum yield, good photochemical stability, and excellent monochromaticity. Quantum dots based on core-shell structure have developed rapidly in light-emitting diodes, biomonitoring and other applications due to their fluorescence emission peaks covering the entire visible light region, nearly 100% quantum yield, convenient quantum dot structure designability, and excellent photochemical stability. . [0003] In quantum dot light-emitting diodes, the Cd-based core-shell structure quantum dots penetrated by the Se element are beneficial to reduce the hole injection barrier, optimize the energy level matching between the q...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/88C09K11/02B82Y20/00B82Y40/00
CPCC09K11/883C09K11/02B82Y20/00B82Y40/00
Inventor 王垒刘意婷申怀彬杜祖亮李林松
Owner HENAN UNIVERSITY
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