Semiconductor wafer test structure and test method

Abstract

The invention provides a test structure of a semiconductor wafer, which comprises a first test pad, a second test pad, a third test pad and a fourth test pad, two ends of the first resistor are respectively connected with the first test pad and the second test pad; two ends of the second resistor are respectively connected with the third test pad and the fourth test pad; and two ends of the third resistor are respectively connected with the second test pad and the third test pad. The technical scheme of the invention has the beneficial effects that the influence of a probe of a probe test machine on the test result of the resistance test structure on the semiconductor wafer is eliminated, the structure is simple, the overall layout of the existing test structure is not changed, the area occupied by the test structure on the wafer is not influenced, and adjustment and adaptation can be carried out according to the wafer layout.

Description

technical field [0001] The invention relates to the technical field of semiconductor testing, in particular to a testing structure and testing method of a semiconductor wafer. Background technique [0002] In the process of semiconductor wafer processing, in order to monitor the processing technology, test structures are usually set on some predetermined positions of the wafer. These test structures are processed together with the wafer process and the device structure on the wafer. During the test phase Performing performance tests on these test structures can reflect whether there is a problem in the processing technology of the wafer. Since these test structures are not the final products required by the factory, it is impossible to occupy too much space on the wafer, so complex test circuits cannot be applied to these test structures. On the basis of satisfying the amount of data expressed, often only Using some simple circuit structures, such as resistance mismatch tes...

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Problems solved by technology

[0008] figure 2 In the resistance mismatch curve shown, the X-axis is used to represent the size of the resistance, the unit is 1 / um, and the Y-axis is used to represent the matching degree of the resistance. The linearity of the resistance mismatch curve is proportional to the process stability, but Since the probes used in the probe test machine also have resistance, the resistance value of the probe will affect the test results when performing the above resistance mismatch test, especially when dealing with small resistance values, making the linearity of the resistance mismatch curve In turn, the resistance mismatch curve cannot reflect the stability of the process through linearity, and the test purpose cannot be achieved

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