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Preparation method of metal compound film

A metal compound and thin film technology, which is applied in metal material coating process, ion implantation plating, coating, etc., can solve the problem of large tensile stress of deposited thin film, and achieve the effect of improving reliability

Active Publication Date: 2021-12-31
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of this invention is to propose a kind of preparation method of metal compound thin film, solve the problem that depositing film tensile stress is too large in process, described preparation method comprises:

Method used

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  • Preparation method of metal compound film
  • Preparation method of metal compound film

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Embodiment Construction

[0030] The present invention will be described in more detail below. While the present invention has provided preferred embodiments, it should be understood that the invention can be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0031] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, or in a specific orientation....

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Abstract

The invention discloses a preparation method of a metal compound film. The preparation method comprises the following steps that 1, a wafer on which a film is to be deposited is placed on a tray above a base in a reaction chamber; and 2, mixed gas of inert gas and process gas is introduced into the reaction chamber, pulse direct-current power is applied to a metal target material in the reaction chamber, the mixed gas forms plasma, the plasma bombards the metal target material, the metal compound film is formed on the wafer, and meanwhile, radio frequency bias power is applied to the base so as to adjust the stress of the metal compound film. In the step 2, the radio frequency bias power is applied to the base, so that the stress of the metal compound film is adjusted when the metal compound film is formed on the wafer. The problem that the thin film is bent under stress and even falls off is solved, and the reliability of devices is further improved.

Description

technical field [0001] The invention relates to the field of semiconductor technology, and more specifically, to a method for preparing a metal compound thin film. Background technique [0002] As a thin film deposition technology, PVD (Physical Vapor Deposition) is mainly used in the deposition of various functional thin films, and is widely used in pan-semiconductor fields such as integrated circuits, solar cells, and LEDs. [0003] Aluminum nitride (AlN) thin films deposited by PVD have been widely used in the fields of LED, MEMS, and HEMT as buffer layers or piezoelectric layers. Ideally, the stress of the AlN film is zero, otherwise the stress is too large, which will cause the film to bend or even fall off, which will affect the reliability of the device. After optimizing the process parameters such as sputtering power, sputtering temperature, sputtering gas, and pressure, keeping other process parameters unchanged, the stress of the AlN film remains basically unchang...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/58C23C14/54C23C14/02C23C14/06
CPCC23C14/3485C23C14/345C23C14/5873C23C14/5833C23C14/021C23C14/022C23C14/0036C23C14/54C23C14/0617Y02P70/50
Inventor 马迎功郭冰亮武树波赵晨光周麟宋玲彦杨健甄梓杨翟洪涛段俊雄师帅涛许文学张璐崔亚欣
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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