Ion screen for improving uniformity of plasma ashing process

A kind of ashing process and plasma technology, which is applied in the photoplate making process of the pattern surface, photosensitive material processing, optics, etc., can solve the problems such as difficult to achieve uniformity, and achieve cost control, uniformity improvement, and process uniformity sex-enhancing effect

Pending Publication Date: 2021-10-01
上海稷以科技有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for a well-designed commercial ashing reaction chamber, under extreme process conditions, parameters such as power, air pressure, and gas flow are already at the limit state, and it is difficult to achieve uniform sexual enhancement

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ion screen for improving uniformity of plasma ashing process
  • Ion screen for improving uniformity of plasma ashing process
  • Ion screen for improving uniformity of plasma ashing process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0024] Such as image 3 , Figure 4 and Figure 5 As shown, an ion screen for improving the uniformity of the plasma ashing process includes a screen body 1, and a screen hole 2 is provided on the screen body 1, and a convex area 3 is provided in the middle of the screen body 1, so that The sieve holes 2 are evenly distributed on the sieve body 1 and the convex area 3 .

[0025] Further, the surface of the convex area 3 is set as a curved surface 4 .

[0026] Further, the convex area 3 is located in the middle of the upper surface of the screen body ( image 3 shown) or the middle of the lower surface ( Figure 4 shown), forming an upward or downward convex shape.

[0027] Further, the convex area 3 is a hollow or solid area.

[0028] Further, the screen body 1 is made of aluminum.

[0029] Further, the aluminum material is anodized aluminum material....

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an ion screen for improving the uniformity of a plasma ashing process, which comprises a screen body, and a convex area is arranged in the middle of the screen body. Compared with the prior art, theion scree has the advantages that by redesigning the mechanical shape of the ion screen, the uniformity is improved, and the photoresist removing rate of the center of the wafer is controlled; and meanwhile, the ion screen can be assembled by turning over by 180 degrees, and is suitable for occasions where the photoresist removing speed of the center of the wafer is low originally, so that the process is easier to adjust.

Description

technical field [0001] The invention relates to an ion screen, in particular to an ion screen for improving the uniformity of a plasma ashing process. Background technique [0002] In the wafer manufacturing process, plasma ashing is an indispensable pass in the entire production process. This process is usually used for photoresist removal after dry etching; using the plasma ashing reaction chamber, it can realize The removal of the photoresist or the modification of the morphology of the photoresist, so as to achieve better process control and stability. [0003] With the continuous reduction of critical dimensions in the wafer manufacturing process, the requirements for the stability of the plasma ashing process and the uniformity of the wafer after the process is completed are getting higher and higher. Generally, the uniformity is required to be less than 5%. As an important part of the plasma ashing equipment, the ion screen can not only filter the charged ions in th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42H01J37/32
CPCG03F7/427H01J37/32366H01J37/32798
Inventor 王艳良李鑫
Owner 上海稷以科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap