Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Charged particle beam system for scanning a sample

A charged particle beam and charged particle technology, applied in the field of scanning technology, can solve the problem of destroying the structure of the device

Pending Publication Date: 2021-09-10
ASML NETHERLANDS BV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this approach would destroy the originally designed device structure and would not allow the sample to be used as a device because the blanket-coated gold layer would short out all circuits formed on the sample

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Charged particle beam system for scanning a sample
  • Charged particle beam system for scanning a sample
  • Charged particle beam system for scanning a sample

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028]Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. The following description refers to the accompanying drawings, in which like numerals in different drawings refer to the same or similar elements unless otherwise stated. The implementations set forth in the following description of the exemplary embodiments do not represent all implementations according to the invention. Rather, they are merely examples of apparatus and methods in accordance with aspects of the invention as set forth in the appended claims. For example, although some embodiments are described in the context of utilizing a scanning electron microscope (SEM) to generate wafer images and detect defects, the disclosure is not limited thereto. Other types of microscopes such as transmission electron microscopy (TEM) and scanning tunneling microscopy (STM) can be similarly applied.

[0029] Enhancing the computing power of elect...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method for scanning a sample by a charged particle beam tool is provided. The method includes providing the sample having a scanning area including a plurality of unit areas, scanning a unit area of the plurality of unit areas, blanking a next unit area of the plurality of unit areas adjacent to the scanned unit area, and performing the scanning and the blanking the plurality of unit areas until all of the unit areas are scanned.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to US Application 62 / 787,121, filed December 31, 2018, and US Application 62 / 943,695, filed December 4, 2019, which are hereby incorporated by reference in their entireties. technical field [0003] Apparatuses and methods according to the present disclosure relate generally to scanning techniques, and more particularly to methods and systems for scanning a sample by a charged particle beam tool such as a scanning electron microscope (SEM). Background technique [0004] During the manufacture of integrated circuits (ICs), unfinished or completed circuit components are inspected to ensure that they are manufactured as designed and free from defects. Inspection systems using optical microscopes or charged particle (eg electron) beam microscopes (eg SEM) may be employed. For inspection of fine structures, electron beams are preferred. Using an electron beam to perform such inspections o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/28G01N23/2251G01R31/28G01R31/307
CPCH01J37/28G01N23/2251H01J2237/24592H01J2237/043H01J2237/2817G01N2223/102G01N2223/351G01N2223/611G01N2223/646G01N23/06G01N23/203H01J37/045H01J37/1474
Inventor A·里昂斯T·I·瓦洛
Owner ASML NETHERLANDS BV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products