Etching machine structure capable of dynamically adjusting horizontal position of coil

Abstract

The invention discloses an etching machine structure capable of dynamically adjusting the horizontal position of a coil. The etching machine structure comprises a first plasma reaction cavity; a horizontal sliding module having at least one first height support; a first horizontal support; a first sliding piece; and a second sliding piece; a coil holder; and a coil module, wherein the first sliding piece and the second sliding piece enable the coil module to move in the X-axis direction or the Y-axis direction above the first plasma reaction cavity. By means of the implementation of the invention, the sediments on different parts of the wall body of the reaction chamber can be dynamically cleaned.

Description

technical field [0001] The invention relates to an etching machine structure, in particular to an etching machine structure in which the horizontal position of a coil can be dynamically adjusted. Background technique [0002] For Inductively Coupled Plasma (ICP), the position and length of the coil are very important. Once the length and position of the coil are fixed, they will not change again, so the uniformity of plasma concentration, electron temperature distribution, and the position and degree of local damage in the reaction chamber will be fixed. [0003] like figure 1 As shown, when the etching machine is used for a period of time, on the wall of the reaction chamber, there will be polymer deposition after the plasma reaction (dark area in the figure), and the deposition of related polymers will be This causes distortion of the process parameters in the reaction chamber. In addition, when the thickness of the polymer deposition gradually increases, the level of im...

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Problems solved by technology

[0003] like figure 1 As shown, when the etching machine is used for a period of time, on the wall of the reaction chamber, there will be polymer deposition after the plasma reaction (dark area in the figure), and the deposition of related polymers will be Distortion of the process parameters in the reaction chamber. In addition, when the thickness of the polymer deposition gradually increases, the level of impurity particles in the reaction chamber will also increase, which will seriously affect the yield.

[0004] The existing inductively coupled plasma etching machine, especially when using dry clean (dry clean), because the position of the coil is fixed at the same position, so the part where the polymer is removed (the light-colored area in the figure), It is also restricted, causing the reaction chamber to not be cleaned effectively

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