Semiconductor etching equipment and silicon carbide wafer etching method

Abstract

The invention discloses a semiconductor etching device and a silicon carbide wafer etching method. The semiconductor etching device comprises a process chamber, the process chamber is internally provided with a magnetron sputtering assembly, and the magnetron sputtering assembly is installed on the side wall of the process chamber and located above a bearing part used for bearing the wafer in the process chamber; and the magnetron sputtering assembly comprises a base assembly and a shielding assembly, the base assembly is used for fixing a target material and attracting plasma to bombard the target material, and the shielding assembly can rotate and is used for selectively shielding the target material. By adopting the semiconductor etching device to etch a silicon carbide wafer, the problem that a device is easy to damage due to a point discharge phenomenon caused by the fact that the side wall and the bottom surface of a formed etching structure are almost vertical can be solved.

Description

Technical field [0001] The invention relates to the field of semiconductor processing technology, and in particular to a semiconductor etching equipment and an etching method for silicon carbide wafers. Background technique [0002] Silicon carbide (SiC) material, as the third generation wide bandgap semiconductor material, has a series of advantages such as large bandgap width, high thermal conductivity, high breakdown electric field strength, high saturated electron drift speed and the ability to withstand extreme environmental changes, making SiC The material has great application potential in high temperature, high frequency, high power, optoelectronics and radiation resistance. At present, silicon carbide materials are mainly used in the preparation of electronic devices. [0003] Silicon carbide material has high hardness and very stable chemical properties. Dry etching is generally used to etch silicon carbide wafers. Generally speaking, during the etching process of...

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Problems solved by technology

[0004] The invention discloses a semiconductor etching device and an etching method for a silicon carbide wafer, in order to solve the problem that when etching a silicon carbide wafer, the side wall and the bottom surface of the formed etching structure are nearly vertical, which will cause a tip discharge phenomenon, which is easy to damage device problem

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