Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Memory programming operation method and device

An operation method and memory technology, applied in the field of memory, can solve problems such as programming interference, inability to effectively increase channel potential, etc., and achieve the effect of reducing programming interference

Active Publication Date: 2022-04-29
YANGTZE MEMORY TECH CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this programming operation scheme for the upper stack has the problem that the precharge cannot effectively increase the channel potential, and the programming disturbance is serious.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory programming operation method and device
  • Memory programming operation method and device
  • Memory programming operation method and device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0067] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments. In particular, the following examples are only used to illustrate the present invention, but not to limit the scope of the present invention. Likewise, the following embodiments are only some of the embodiments of the present invention but not all of them. All other embodiments obtained by those skilled in the art without creative efforts all fall within the protection scope of the present invention.

[0068] In addition, the directional terms mentioned in the present invention, such as [top], [bottom], [front], [back], [left], [right], [inside], [outside], [side], etc., only is the direction with reference to the attached drawings. Therefore, the directional terms used are used to illustrate and understand the present invention, but not to limit the present invention. In the various figures, structurally similar elements are denoted by the sa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a programming operation method and device for a memory. The memory includes a first storage string, a first input terminal and a second input terminal located at both ends of the first storage string, and the first storage string includes a plurality of first memory strings connected in series. The unit, the programming operation method includes: performing the precharging of the first programming operation, including providing the first preset voltage to the second input terminal, and providing the second preset voltage to the gate layer of the first memory cell in the programmed state , turn on the first memory cell in the programmed state, so as to precharge the channel in the first memory string; perform the first programming operation, the first programming operation is from the first memory cell close to the second input terminal to far away The direction of the second input terminal is used to program a plurality of first memory cells to be programmed, so that when the memory string is programmed, the charge density of the channel can be effectively reduced in the pre-charging stage of the programming operation, thereby reducing the programming interference.

Description

【Technical field】 [0001] The invention relates to the technical field of memory, in particular to a memory programming operation method and device. 【Background technique】 [0002] As technology develops, the semiconductor industry is constantly looking for new production methods to allow each memory die in a memory device to have a greater number of memory cells. Among them, 3D NAND memory has become a cutting-edge three-dimensional memory technology with great development potential due to its advantages of high storage density and low cost. [0003] At present, in the erasing process of 3D NAND memory, in order to improve the erasing efficiency and reduce repeated read and write operations on the storage unit, a half-block erasing scheme will be adopted, that is, for the memory block that has already written data, Only the data of the upper stack or the lower stack in the memory block is erased, and the data of the other stack is not erased. [0004] In the programming pr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C5/14G11C16/14
CPCG11C5/147G11C16/14
Inventor 李楷威宋雅丽赵向南
Owner YANGTZE MEMORY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com