ZnO-based electrothermal film doped by Al<3+>, Ga<3+> and Ag<3+>, and preparation device and method thereof
A technology for preparing devices and electric heating films, applied in the direction of electric heating devices, ohmic resistance heating, electrical components, etc., can solve problems such as pollution, power attenuation, and poor film quality, and achieve uniform film structure, adjustable power, and high transparency. excessive effect
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[0031] A kind of Al of the present invention 3+ , Ga 3+ 、Ag + Doped ZnO-based electrothermal film, the structural formula of the electrothermal film is Zn 1-x m x O, wherein 0<x≤0.2, M is selected from one or more of Al, Ga, Ag.
[0032] like figure 1 As shown, an Al of the present invention 3+ , Ga 3+ 、Ag +The preparation device of doped ZnO-based electrothermal film includes a box 1 in the shape of a cuboid. The middle parts of the outer walls on the left and right sides of the box 1 are respectively equipped with motors 2. The two motors 2 are arranged coaxially, and their output shafts pass through the The wall of the box body 1 extends into the box body 1, and the quartz tube base 3 is coaxially clamped and fixed between the output shafts of the two motors 2. The box body 1 is equipped with a heating module, and the heating module includes a main heating module 61 and two Block auxiliary heating module 62, wherein the main heating module 61 is fixed on the bottom ...
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