Threshold distribution fitting method, device and system for flash memory

A technology of threshold voltage distribution and flash memory, which is applied in the field of threshold distribution fitting of flash memory, can solve problems such as large amount of calculation and low efficiency, and achieve the effect of improving fitting efficiency and reducing the amount of data calculation

Active Publication Date: 2021-04-30
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Application Information

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Problems solved by technology

However, the threshold distribution fitting technology in the prior art has a large amount of calculation and low efficiency

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  • Threshold distribution fitting method, device and system for flash memory
  • Threshold distribution fitting method, device and system for flash memory
  • Threshold distribution fitting method, device and system for flash memory

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Embodiment Construction

[0064] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0065] In order to facilitate understanding of the reading method provided by the embodiment of the present application, a specific application scenario of the embodiment of the present application is firstly introduced. A nonvolatile memory includes a plurality of memory cells arranged in an array for storing data. Wherein, the storage unit is divided into several blocks (blocks), and each block is further divided into several pages (pages). Operations such as reading, writing, ver...

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Abstract

The invention discloses a threshold distribution fitting method, device and system for a flash memory, and the method comprises the steps: carrying out the fitting of the distribution of storage units in a plurality of voltage intervals in initial threshold voltage distribution, obtaining a first fitting normal distribution parameter, and then carrying out the fitting of one of two adjacent threshold voltage distribution states; if the fitted threshold voltage distribution state and the to-be-fitted threshold voltage distribution state are two adjacent threshold voltage distribution states, obtaining a second fitted normal distribution parameter of the fitted threshold voltage distribution state; and according to the second fitting normal distribution parameter, performing fitting to obtain a third fitting normal distribution parameter of the threshold voltage distribution state to be fitted. In the embodiment of the invention, the fitting of the threshold voltage distribution state can be carried out in sequence, and only the fitting normal distribution parameter of the threshold voltage distribution state adjacent to the threshold voltage distribution state obtained by previous fitting is referred to in the fitting process of the threshold voltage distribution state, so that the data calculation amount is reduced, and the fitting efficiency is improved.

Description

technical field [0001] The technical field of data processing of the present application particularly relates to a threshold distribution fitting method, device and system for flash memory. Background technique [0002] The characteristics of the semiconductor memory device may be volatile or non-volatile, and although the volatile semiconductor memory device can perform read operation and write operation at high speed, the memory stored in the volatile semiconductor memory The content in will be lost. In contrast, nonvolatile semiconductor memory devices are characterized by retaining stored contents regardless of power-on. A flash memory device (Flash memory) is an example of a typical nonvolatile semiconductor memory device, and the flash memory device may be widely used as a data storage medium. [0003] As the demand for large-capacity storage devices increases, multi-level cell memory devices or multi-bit memory devices that store multiple bits per cell are being wid...

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Application Information

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IPC IPC(8): G11C16/34
CPCG11C16/3404
Inventor 王颀杨柳何菁李前辉于晓磊霍宗亮叶甜春
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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