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Method for forming a semiconductor device and semiconductor device

A semiconductor and device technology, which is applied to the formation method of semiconductor devices and the field of semiconductor devices, can solve the problems of composition change, poor adhesion between electrodes and packaging layers, etc., to prevent diffusion, enhance adhesion, and prevent composition changes. Effect

Active Publication Date: 2021-02-05
YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in 3D PCM, the adhesion between the phase change material and the electrodes above and below the phase change material and the encapsulation layer is not good, which easily causes the diffusion of the phase change material along the sidewall interface of the electrode material and the composition change of the phase change material.

Method used

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  • Method for forming a semiconductor device and semiconductor device
  • Method for forming a semiconductor device and semiconductor device
  • Method for forming a semiconductor device and semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0095] figure 2 A schematic flow diagram of the implementation process of the method for forming a semiconductor device provided in the embodiment of the present application, as shown in figure 2 As shown, the method includes the following steps:

[0096] Step S201, forming a semiconductor stack structure.

[0097] Figure 3A A schematic diagram of a three-dimensional structure of a semiconductor stack structure provided in an embodiment of the present application, Figure 3B A schematic cross-sectional structure diagram of a semiconductor stack structure provided in an embodiment of the present application, combined with Figure 3A with3B As shown, a semiconductor stack structure 31 is deposited on a substrate 30 .

[0098] Here, the substrate 30 is located at the bottom of the entire structure, and the material of the substrate can be selected from silicon (Si), silicon-germanium alloy (SiGe), silicon carbide (SiC), aluminum oxide (Al 2 o 3 ), aluminum nitride (AlN),...

Embodiment 2

[0111] Figure 4 It is a schematic diagram of the implementation flow of the method for forming a semiconductor device provided in the embodiment of the present application. In the embodiment of the present application, such as Figure 4 As shown, the method includes the following steps:

[0112] Step S401 , stacking and forming an intermediate electrode layer, a phase-change material layer and a top electrode layer sequentially from bottom to top to form the semiconductor stack structure.

[0113] Figure 5A A schematic diagram of a three-dimensional structure of a semiconductor stack structure provided in an embodiment of the present application, Figure 5B A schematic cross-sectional structure diagram of a semiconductor stack structure provided in an embodiment of the present application, combined with Figure 5A with 5B As shown, the semiconductor stack structure 50 at least includes: a top electrode layer 502-1, a phase change material layer 503 and a middle electrode...

Embodiment 3

[0139] Image 6 A schematic flow diagram of the implementation process of the method for forming a semiconductor device provided in the embodiment of the present application, as shown in Image 6 As shown, the method includes the following steps:

[0140] Step S601 , stacking and forming an intermediate electrode layer, a phase change material layer and a top electrode layer sequentially from bottom to top to form a semiconductor stack structure.

[0141] Here, the semiconductor stack structure is a stack structure with a certain number of layers formed on the substrate, Figure 7A A schematic diagram of a three-dimensional structure of a semiconductor stack structure provided in an embodiment of the present application, Figure 7B A schematic cross-sectional structure diagram of a semiconductor stack structure provided in an embodiment of the present application, combined with Figure 7A with 7B As shown, the semiconductor stack structure 70 at least includes: a top elect...

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Abstract

The embodiment of the present application discloses a method for forming a semiconductor device and a semiconductor device, wherein the method includes: forming a semiconductor stack structure; selecting at least one layer of the semiconductor stack structure as a layer to be processed, and , etching the layer to be treated to form first etching gaps and first phase change structures alternately arranged along the second direction, the surface of the first phase change structure has a first roughness, so The first direction is perpendicular to the second direction; roughening treatment is performed on the surface of each of the first phase change structures, so that the treated surface of the first phase change structure has a second roughness, and The second roughness is greater than the first roughness; a first encapsulation layer is deposited around the processed first phase change structure to form the semiconductor device.

Description

technical field [0001] The embodiment of the present application relates to the field of semiconductor technology, and relates to but not limited to a method for forming a semiconductor device and the semiconductor device. Background technique [0002] In commercial semiconductor devices, such as Three Dimensional Phase Change Memory (3D PCM), word lines (Word Line, WL) and bit lines (Bit Line, BL) are composed of 20nm / 20nm lines or gaps (Line / Space, L / S) pattern formation. Memory cells are placed at intersections between mutually perpendicular WL and BL, forming a cross-point architecture. [0003] The 3D PCM memory cells are encapsulated by a thin layer of silicon nitride to prevent the diffusion of the phase change material. However, in 3D PCM, the adhesion between the phase change material and the electrodes above and below the phase change material and the encapsulation layer is not good, which easily causes the diffusion of the phase change material along the sidewa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00H01L27/24
CPCH10B63/84H10N70/231H10N70/801H10N70/821H10N70/041H10N70/011
Inventor 刘峻
Owner YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
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